高效无镉Sb2(S,Se)3薄膜太阳能电池界面调控及其载流子输运机制的研究

Sb2(S,Se)3薄膜具有原料来源丰富、光电性能优异等特点，是一种极具发展前景的低成本太阳能电池吸收层材料。当前限制Sb2(S,Se)3薄膜太阳能电池效率的一个重要因素是严重的界面载流子复合。本项目拟以水热和后硒化法制备的Sb2(S,Se)3薄膜为基础，首先构建无镉TiO2/Zn(O,S)双缓冲层，研究Zn(O,S)组分、结构对Zn(O,S)/Sb2(S,Se)3界面匹配和电荷传输的影响，阐明O/S比例-界面能级排列-器件性能的关联；其次，探究阳离子掺杂对NiOx绿色空穴传输层的导电性、能带结构以及Sb2(S,Se)3/C界面电荷传输的影响。最后，结合能带理论计算和电池性能结果分析载流子输运的微观机制，仔细调控器件界面以期抑制载流子复合，提高无镉Sb2(S,Se)3电池性能。这些研究可为发展绿色、高效薄膜太阳能电池提供理论和实验指导。

Sb2(S,Se)3 is a promising absorber material for low cost thin film solar cell, due to its abundant raw material and excellent photoelectric property. To date the severe interface recombination is considered as one of major factors limiting access to high-efficiency Sb2(S,Se)3 solar cell. In this project, the Sb2(S,Se)3 thin film will be prepared through the in-situ hydrothermal growth and post-selenization process. The TiO2/Zn(O,S) is firstly proposed as Cd-free double buffer layer for Sb2(S,Se)3 solar cell, in which the effects of composition and structure of Zn(O,S) on Zn(O,S)/Sb2(S,Se)3 interface and charge transport will be studied. The relation among O/S ratio, band alignment and device performance will also be revealed. Secondly, cation doped NiOx will be selected as a hole transport layer to study the impact of doping on the conductivity and band gap structure of NiOx as well as the interfacial charge transfer in Sb2(S,Se)3/C. Finally, the mechanism of carrier transport will be investigated according to theoretical band gap calculation and device results. After engineering the interface carefully, the performance of Sb2(S,Se)3 solar cell is expected to be improved by reducing interface recombination. All the research above may provide theoretical and experimental guidances for the development of environment-friendly and high-efficiency thin film solar cells.