GaN/AlGaN太赫兹量子阱器件在工作温度与波长覆盖范围方面的优势，更加符合大规模实用化光电技术的要求，成为该领域研究前沿的热点，却面临两方面挑战：一是由于浅杂质电子跃迁能量刚好落在太赫兹波段导致其对量子阱太赫兹响应的影响作用新奇化复杂化；二是器件响应度等关键性能亟需提高。本项目拟发展磁场技术，在器件结构模拟仿真基础上，研究朗道能级与浅杂质能级随磁场移动与分裂的特性，探讨GaN势阱电子向AlGaN势垒转移的弹性散射机制，观察浅杂质电子在与太赫兹辐射互作用过程中出现的新奇光谱结构与物理现象，分析光谱结构与浅杂质及势阱子带能级跃迁之间的关系，解决利用AlGaN势垒浅杂质电子激发器件太赫兹辐射响应的关键问题，通过磁场对势垒层浅杂质电子的有效调控实现大幅增强器件响应度与波长可调范围的目标。本研究有望在提高物理认知的同时，解决实际应用方面的难题，为太赫兹及GaN基光电器件的发展提供理论与技术创新

GaN/AlGaN terahertz quantum-well optoelectronic devices have attracted great attention due to advantages in operating temperature and wider spectral range, satisfying technical requirement of mass production. They are currently facing two big challenges for further development. One is the complicated effect on terahertz response of GaN/AlGaN quantum well by shallow impurity electrons whose transition energy between shallow energy levels just falls into terahertz spectral region. The other is the relative poor performance in terahertz response of quantum well. We propose a magnetic field scheme, based on the numerical simulation of device structure, to investigate the splitting and move of landau levels and shallow energy levels, discuss the elastic scattering mechanism for electron transfer from GaN potential well to AlGaN potential barrier, observe novel structures and physical phenomena occurred during the interaction between shallow impurity electron and terahertz emission, analyze the relationship of photocurrent spectral structure with shallow impurity electron and subband energy level transition, solve the key issues of stimulate terahertz response in GaN quantum wells by shallow impurity electron in AlGaN barrier layer, and finally realize the strong enhancement of terahertz responsivity and wavelength tunable range through the manipulation of shallow energy level. This project is expected to improve the physics knowledge and overcome difficulty in practice, supporting innovation in science and technology for terahertz and GaN-based optoelectronic devices.