在平板显示领域，非晶氧化物半导体技术被视为很有可能取代硅基半导体技术而成为下一代平板显示的有源驱动技术。非晶铟镓锌氧化物（IGZO）是当前研究得最多与最深入的非晶氧化物半导体，然而由于IGZO存在着不适合干、湿法刻蚀，对氧气、水蒸气敏感，电学稳定性不佳等天然弱点，再加上其技术标准及知识产权几乎为日本所垄断，因此急需开发一种替代的、不含镓/锌的新型高性能非晶氧化物半导体材料。本项目以具有高载流子迁移率的氧化铟为本体，通过向其中掺杂与氧原子结合能力较强的元素及调控工艺参数来控制材料中氧缺陷的数量从而达到控制载流子浓度的目的，并通过进一步优化实验参数获得大气中稳定的高性能薄膜晶体管器件的研制目标。同时本项目还将针对上述研究过程中面临的一些其它关键科学问题，如工艺条件与器件性能之间的微观联系进行深入性的创新研究。这些研究成果将为深入认识非晶氧化物半导体材料及其晶体管器件奠定技术和理论基础。

In the field of flat panel displays (FPDs), amorphous oxide semiconductors are considered to replace the current silicon based semiconductor in the next generation of active matrix FPDs. However, the extensively investigated amorphous indium-gallium-zinc oxide (a-IGZO) having serious problems in electrical stability is vulnerable to dry/wet etching processes and susceptible to atmosphere such as oxygen and moisture, and the related patents and technology standards are monopolized by Japan. Therefore, it is urgent to develop an alternative Ga- and/or Zn- free new-type high-performance amorphous oxide semiconductor. The proposed project aims at achieving air-stable high-performance amorphous oxide thin-film transistors by optimizing experimental parameters and doping high-mobility indium oxides with elements that having strong bond dissociation energy with oxygen to depress the oxygen vacancies to regulate carrier density. Meanwhile, we intensively study other key issues related to the above-mentioned topic by some novel techniques, such as the microscopic relation between the process condition and the transistors’ performance. The achievements in this project will be helpful for further understanding the amorphous oxide semiconductors and their thin-film transistors.