与半导体量子点等常规量子光源相比，金刚石SiV色心具有更窄的零声子线、更强的荧光辐射和更短的受激时间，是新一代高品质单光子量子光源。然而，采用CVD法及离子注入法制备的金刚石SiV色心存在生成效率低、辐射强度弱、荧光骤降和湮灭等问题。本项目通过微波CVD法和离子注入协同实现硅掺杂，采用碳、氢和电子束辐照形成不同密度的空位分布，利用碳、硅的同族元素大原子锗掺杂形成局域应力，表征金刚石SiV色心荧光特性的演变规律，阐明金刚石SiV色心荧光辐射湮灭的机制，为高强度荧光辐射的金刚石SiV色心单光子源的制备提供理论和技术支持。本课题的主要创新点在于：(1) 以金刚石SiV色心为载体，实现高荧光辐射强度的单光子量子光源；(2) 基于Jahn-Teller效应，采用声子-电子-自旋耦合模型阐述SiV色心荧光辐射湮灭的机制；(3) 利用氢离子的刻蚀和催化非晶碳向金刚石相变，减少石墨化对荧光辐射的抑制。

Silicon vacancy (SiV) color center in diamond is believed to exhibit narrower zero phonon line(ZPL), stronger photoluminescence intensity and shorter excitation time than that in conventional quantum photoemitters such as semiconductor quantum dots, that is regarded as a new generation of distinguish single photon source. However, SiV color centers fabricated through CVD along with ion implantation suffer disadvantages such as small creation rate, low fluorescence intensity and even annihilation. In this program, SiV color center in diamond were prepared by microwave assisted CVD combined with ion implantation techniques. Vacancies and local stress were formed by carbon, hydrogen ions and electron beams’ irradiation and larger atomic germanium doping. Raman and photoluminescence spectra were carried out to investigate the evolution of the photoluminescence intensity with various vacancy density and local stress. Based on the experimental data and hypothesis, the mechanism of annihilation of photoluminescence of SiV color in diamond will be elaborated. The expected achievement of this program will bring solid background inspect of theoretical and technical support to prepare a single photon source. The highlights of this research program are as follows: (1) a single quantum photoemitter with high photoluminescence intensity, narrower zero phonon line and shorter excitation time is achieved by SiV color center in diamond; (2) the mechanism of fluorescence annihilation in SiV color center in diamond is explained through coupling interaction of phonon, electron and spin based on Jahn-Teller effect; (3) conversion of graphite induced by ion implantation to diamond by hydrogen etching and catalytic effects can be obtained to reduce the influence of graphitization of diamond on fluorescence.