器件串联技术可以有效地提升电力电子开关的电压等级。做为宽禁带半导体器件的代表，SiC-MOSFET器件由于开关速度快、寄生参数小等特点，导致串联均压控制的难度更大，且串联应用中产生的共模电流干扰更为显著。针对这些问题，本课题拟从以下三个方面展开研究：在拓扑层面，研究钳位电容交错互联型SiC-MOSFET串联均压拓扑结构及参数优化设计方法，以解决现有均压方案在高开关速度和高均压可靠性方面无法兼顾的矛盾；在控制层面，研究SiC-MOSFET串联拓扑的多目标协同控制策略，在完成均压目标的同时实现对串联器件dv/dt的在线控制；在驱动层面，研究SiC-MOSFET串联的驱动电流递增效应建模及其解决办法，以消除串联系统中共模电流的负面影响；综合以上三点，将形成一套完备的SiC-MOSFET串联均压电路拓扑理论及共模电流抑制策略，保障串联器件的可靠、高性能运行。

Series-connection technology could increase the voltage rating of power semiconductor switches. However, as wide-band-gap device, SiC-MOSFETs switch very fast and show very small parasitic parameters, so they are more vulnerable to transient unequal voltage sharing and common mode current interference when connected in series. In order to solve these issues, this project plans to conduct the research in the following three aspects. In the topology aspect, clamp-capacitor-interleaving topology for series-connected SiC-MOSFETs will be analyzed first to deal with the contradiction between fast switching and high reliability in conventional voltage balancing methods. In the control algorithm aspect, Multi-objective control strategy will be studied to both control the voltage of the clamp capacitors and optimize the dv/dt of the series connected SiC MOSFETs. In the gate drive circuit aspect, the gate drive current increasing phenomenon will be researched, and a solution will be proposed to overcome its effect on both voltage sharing and common mode current amplitude. With the combination of the mentioned research, a whole theory for topology theory and common mode current suppression method of series-connection of SiC-MOSFET can be obtained, which will lead to reliable and high performance operation of the series connected SiC-MOSFETs.