在电子信息技术领域，大数据时代的来临，要求信息存储和处理具有更大存储容量和更快处理速度。基于CoFeB/MgO/CoFeB磁性隧道结的磁性随机存储器具有高速度、高密度、低功耗、非易失等优势，成为当前研究热点。自旋噪声谱技术作为自旋探测的有力手段，对揭示垂直磁各向异性CoFeB/MgO薄膜磁化翻转的内在机制和探究影响存储速度的因素具有重要意义。.本项目将自主设计并搭建高效率、高信噪比兼具磁畴成像功能的自旋噪声谱测量系统；利用该系统探究楔形CoFeB/MgO薄膜的准静态自旋噪声谱对样品厚度、温度、磁畴结构的依赖关系，研究外场调控下垂直磁化区域的磁化翻转动态过程中的自旋噪声谱，揭示自旋本征属性以及磁化翻转的内在物理机制。深入理解信息存储时，磁化翻转的自旋特性。.本项目将为探索磁性膜体系的自旋本征属性以及磁化翻转的内在物理机制提供一个新的方法，力求推动自旋电子学领域的技术发展和功能器件的开发应用。

In the field of electronic information technology, the advent of the era of big data has required greater storage capacity and faster processing speed of information storage and processing. Magnetic random access memory (MRAM) based on CoFeB/MgO/CoFeB magnetic tunnel junction has attracted much research due to its advantages of high speed, high density, low power consumption and non-volatility. As a powerful means of spin detection, spin noise spectroscopy may become particularly important to reveal the intrinsic mechanism of magnetization reversal and to explore the factors affecting the storage speed in perpendicular magnetic an-isotropic CoFeB/MgO thin films. ..This project will design and build a spin noise spectroscopy measurement system with high efficiency and high signal-to-noise ratio together with a magnetic domain imaging module. The system will be used to explore the dependence of the quasi-static spin noise spectroscopy of wedged CoFeB/MgO thin film on the thickness and temperature. The spin noise spectroscopy in the magnetization reversal process of the perpendicular magnetization region under external field control will be studied, and the intrinsic properties of spin and the internal physical mechanism of magnetization reversal will be revealed, facilitating to further understand the spin characteristics of magnetization during information storage...This project provide a new method for exploring the spin intrinsic properties and the internal physical mechanism of magnetization reversal of magnetic materials, and strive to promote the development of technology in the field of spintronics and its application in functional devices.