硬X射线自由电子激光装置束流分配冲击磁铁脉冲功率源研究

批准号:
12005282
项目类别:
青年科学基金项目
资助金额:
24.0 万元
负责人:
刘永芳
依托单位:
学科分类:
同步辐射与自由电子激光原理与技术
结题年份:
2023
批准年份:
2020
项目状态:
已结题
项目参与者:
刘永芳
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中文摘要
硬X射线自由电子激光(XFEL)装置是新一代先进光源,在生物、环境、能源、材料等学科具有不可替代的作用。超导射频电子直线加速器的发展将硬XFEL装置束流重复频率由100Hz提高到1MHz。针对如此高频率的束流分配冲击磁铁脉冲功率源国内外相关研究机构都没有成熟的技术可以借鉴参考。本项目面向将来我国硬XFEL装置的需求,研究能满足超导直线加速器的束流分配冲击磁铁脉冲功率源。重点解决窄脉冲下将脉冲功率源重复频率提高到1MHz并保证重复稳定性优于0.01%的问题。提出了一种二阶电路欠阻尼阶跃响应脉冲成形方案来缩短脉冲前沿;采用碳化硅MOSFET串并联技术来提高脉冲功率源重复频率;采用精确的直流电源稳压控制与纹波补偿措施提高充电稳定性与负载调整率。通过本项目的研究,使得脉冲功率源能长期稳定的工作在1MHz的重复频率下。本项目的研究对我国硬XFEL装置的建设具有重要的科学意义与应用价值。
英文摘要
Hard X-ray free electron laser (XFEL) is a new generation of advanced light source, which plays an irreplaceable role in biology, environment, energy and materials. With the development of superconducting RF accelerating structures, beam repetition frequency of hard XFEL facility has increased from 100Hz to 1MHz. There is no mature beam distribution kicker pulse power supply technology, for such high beam repetition frequency. This project aims at the future requirements of China's hard XFEL facility, and studies the kicker pulse power supply which can satisfy the beam distribution requirements of superconducting linear accelerator. This project focus on solving the problem of increasing the repetition frequency of kicker pulse power supply to 1MHz, while guaranteeing the pulse to pulse repetition stability is better than 0.01%. An under-damped step response pulse shaping scheme for second order circuits is proposed to shorten the pulse front edge. Silicon carbide MOSFET series and parallel technology is used to improve the repetition frequency. Precise voltage control and ripple compensation measures are adopted to improve charging stability. Through the research of this project, the kicker pulse power supply can work stably at 1MHz repetition frequency. The research of this project has important scientific significance and application value for the construction of hard XFEL facility in China.
期刊论文列表
专著列表
科研奖励列表
会议论文列表
专利列表
DOI:10.1007/s42452-021-04889-7
发表时间:2021-12
期刊:SN Applied Sciences
影响因子:2.6
作者:Yongfang Liu;H. Matsumoto;L. Li;M. Gu
通讯作者:Yongfang Liu;H. Matsumoto;L. Li;M. Gu
DOI:10.1109/tpel.2023.3347748
发表时间:2024-04
期刊:IEEE Transactions on Power Electronics
影响因子:6.7
作者:Yong-Fang Liu;Mingqi Gu;Qibing Yuan;Ruiping Wang;Jin Tong;Sheying Li
通讯作者:Yong-Fang Liu;Mingqi Gu;Qibing Yuan;Ruiping Wang;Jin Tong;Sheying Li
DOI:--
发表时间:2023
期刊:IEEE Transactions on Plasma Science
影响因子:--
作者:Yongfang Liu;Hiroshi Matsumotol;Ming Gu;Guoqiang Li;Sheying Li
通讯作者:Sheying Li
DOI:10.13052/2023.aces.j.380917
发表时间:2024-02
期刊:The Applied Computational Electromagnetics Society Journal (ACES)
影响因子:--
作者:Jin Tong;Yong-Fang Liu
通讯作者:Jin Tong;Yong-Fang Liu
DOI:10.1109/aces-china56081.2022.10065288
发表时间:2022-12
期刊:2022 International Applied Computational Electromagnetics Society Symposium (ACES-China)
影响因子:--
作者:Yongfang Liu;Lin Li;Zhihao Chen
通讯作者:Yongfang Liu;Lin Li;Zhihao Chen
国内基金
海外基金
