半导体纳米线在各种低维功能电子器件、量子器件的研究和应用方面扮演着重要的角色，尤其是以砷化铟（InAs）、锑化铟（InSb）及三元化合物InAsSb等为代表的Ⅲ-Ⅴ族窄带隙材料在光纤通讯、高速电子器件、光电探测器、生物传感器、以及太阳能电池等诸多领域有着广阔的潜在应用价值。本项目将利用化学气相沉积方法制备大面积InAsSb纳米线及其异质结（核/壳）纳米线，结合高分辨透射电镜、微纳加工和显微光电表征手段，获得纳米线的制备条件、结构及物性，优化可控的纳米线生长工艺，进而制备基于InAsSb纳米线的光电探测器。测试器件的输出和转移特性、阈值电压、亚阈值斜率、场效应迁移率、光电导增益、响应率以及比探测率等性能参数，探究材料微观结构诱导的表面缺陷态对器件的弹道输运特性、整流特性、光电响应特性、光电探测性能的影响机理，为制备新型高性能光电器件提供基础指导。

Semiconducting nanowires has played an important role in low-dimensional electronic devices, quantum devices and study of novel optoelectronic devices. Particularly, III-V narrow-band-gap materials like InAs, InSb and InAsSb draw more and more attention for their potential applications in optical fiber communication, high-speed electronic devices, photodetectors, bio-sensors, solar cells and many other fields. In this work, large-area InAsSb NWs and corresponding core/shell heterostructures will be synthesized utilizing a simple and low-cost chemical vapor deposition (CVD) method. The preparation conditions, structures and properties of nanowires will be studied first. Combined with high resolution transmission electron microscopy, micro-nano processing and microscopic optoelectronic characterization methods, optimal controllable nanowires growth processes will be obtained. In addition, we will fabricate photodetectors based on InAsSb NWs and hetero-structure NWs. Output and transfer electrical transport characteristics, threshold voltage, sub-threshold slope, field effect mobility, photoconductive gain, responsivity, specific detectivity as well as other performance parameters of the fabricated devices will be performed, analyzed and discussed. Influence mechanisms of surface defect states induced by the microstructure of the materials on ballistic transport properties, rectifying properties, optoelectronic response, and optoelectronic detection performance will also be studied. This work would provide basic guidance for development of novel high-performance NWs optoelectronic devices.