像元级近场光调控集成非制冷红外探测器芯片研究

本项目针对非制冷红外探测器红外吸收率低、噪声等效温差大等瓶颈问题，拟研制高性能的像元级近场光调控集成非制冷氧化钒（VOx）红外探测器芯片，以满足军事、工业、交通、安防等诸多领域的迫切需求。通过解决探测器局域表面等离激元叠层增强吸收结构的设计及像元级集成、光热转换及热力学分布、像元的非均匀校正与补偿等关键科学问题，实现高性能非制冷红外探测器的宽光谱范围、多波段响应、或偏振像元级集成探测，突破其制作瓶颈工艺等关键技术，完成焦平面阵列为320×240、噪声等效温差小于20mK、帧频超过60Hz的非制冷红外探测器原理演示样品，获得具有自主知识产权的成果。基于局域表面等离激元增强吸收技术的高性能非制冷氧化钒红外探测芯片理论和技术的研究将促进新型宽谱、多色或偏振集成红外探测芯片的快速发展，同时可将探测延伸到甚长波或太赫兹波段，为实现高性能非制冷红外探测器芯片国产化和广泛应用奠定坚实理论和技术基础。

In the project, the high standard pixel-level optical integrated vanadium oxide (VOx) infrared (IR) detector chips will be developed by solving the problems such as low absorption rate and large noise equivalent temperature difference, to meet the urgent needs of high-performance uncooled IR detector in the fields of military, industrial, transportation, security monitoring, meteorological, environmental, medical etc.. Some critical scientific problems will be resolved, including the design and pixel integration of high IR absorption subwavelength structures, photo-thermal conversion and the distributions of heat, non uniformity correction and compensation for the pixels. After which, some key technologies such as breakthrough of the key bottleneck technologies for uncooled IR detector manufacturing, broad band and multi-band spectral responses, and pixel-level composite structures with polarization dependency, will be raveled out. Finally, the prototype of MEMS uncooled IR detector will be accomplished with focal plane arrays (FPA) up to 320×240 pixels, noise equivalent temperature difference less than 20mK, and frame rate more than 60Hz.Which will obtain a series of achievement with intellectual property rights. The theoretical and technical researches of high performance uncooled IR detection chips based on plasmonic technology will promote the rapid development of new-type uncooled IR detection chips with broad band multi-color and polarization integration, and extent its utilization to long wavelength and terahertz band. It provided a steady base in theory and technology for localization and widely application of high performance uncooled IR detection chips.