基于藕状规则多孔金属Si和Cu的微通道散热系统是解决IC芯片、大功率激光器、LED等高发热器件散热瓶颈问题的有效途径之一。但由于对Gasar凝固（金属-气体共晶定向凝固）认识的不足，目前所制备的藕状多孔金属的通孔率和气孔分布均匀性还不能满足微通道散热要求。基于此，本项目提出通过理论分析、模拟仿真和实验研究相结合研究Gasar凝固中固/气两相协同共生机制和条件这一共性基础问题，为高通孔率藕状多孔金属的制备带来理论突破。研究内容包括建立固/气两相协同共生所需的凝固速率、气体压力、熔体温度条件；探明熔体对流对固/气两相协同共生的影响；建立Gasar凝固的三维仿真模型，可视化揭示工艺参数对Gasar凝固过程的影响。在此基础上，设计出合理的工艺参数，实现高通孔率藕状多孔Si和Cu的制备，为这两种材料在微通道散热领域的应用以及更多Gasar材料的工程应用奠定基础。

The lotus-type porous Silicon and Copper micro-channel heat sink is an effective way to improve the cooling of advanced IC chip, high-powered laser element and LED device. But due to the limited knowledge on Gasar solidification (metal-gas eutectic unidirectional solidification), the fabricated lotus-type porous metals present a shorter pore length and non-uniform distribution, which leads to a deterioration of the cooling capacity of the heat sink. So this project will concentrated on the coupled growth mechanism and corresponding conditions for solid/gas two phases during Gasar solidification, then achieve a theoretical breakthrough for the facbrication of lotus-type porous metals with good quality. The research contents include establishment of the conditions including solidification velosity, gas pressure and melt temperature for the coupled growth of solid/gas two phases; the influence of the melt convection on the coupled growth conditions; the modelling and simulation of Gasar solidification. Through theoretical analysis, numerical simulation and experimental study, this project will establish a working window for the coupled growth of solid/gas phases and realize the fabrication of lotus-type porous silicon and copper with higher through-hole ratio. The research will be a significant foundation for the application of lotus-type porous metals in the micro-channel heat sink.