SiC MOSFET是一种倍受关注的电力电子器件，但较低的沟道迁移率和高电场下的栅氧可靠性问题制约了其性能进一步提高。近二十年来，此领域研究进展缓慢，一是因为碳化硅/二氧化硅（SiC/SiO2）界面超低浓度缺陷表征难度大，难以从实验上将界面缺陷、缺陷能级和器件电学性能进行对应，限制了针对性地从微观结构改进器件性能；再者SiC MOSFET栅氧可靠性方面的研究较少，失效物理机理未有定论，需深入探索。我们计划从三个方面着手研究该问题：第一，采用离子注入在SiC/SiO2界面可控引入一定浓度的特定元素，借助物化分析和电学分析手段，理清SiC/SiO2界面微观结构对器件电学性能的影响规律；第二，采用经时绝缘击穿（TDDB）测试方法研究栅氧的长期可靠性，分析栅氧的失效机理；第三，通过氧元素注入后氧化和臭氧氧化工艺研究来探索降低沟道电阻和提高栅氧可靠性的方法。

SiC MOSFET has been intensively investigated as a promising power electronic device. However, the relatively low channel mobility and the gate oxide reliability issue under high electric field limit its performance improvement. And, this has proved to be an elusive task in the late twenty years, and no fundamental improvement was achieved. Since it is essentially difficult to quantitatively analyze the SiO2/SiC interface, the relationship between the intrinsic properties (e.g., interface defects, defect energy levels) and the electrical performance of devices has not been clarified yet. To improve the device performance by optimizing the microstructures is thus impeded. On the other hand, there are few studies on the oxide’s physical failure mechanisms of SiC MOSFET which require in-depth research and investigation. Thus we plan to explore the intrinsic gate oxide properties from the following three aspects. First, we will controllably introduce certain amount specific elements to the SiO2/SiC interface by ion implantation. The influence of SiC/SiO2 interface on the electrical properties of devices can be investigated by physicochemical analysis and electrical analysis. Second, we will use the TDDB methodology to study the long-term reliability of gate oxide and analyze the failure mechanism of gate oxide. Third, explore ways to reduce the channel resistance by lowering the interface states via ozone-oxidation and post-ion-implant oxidation.