基于Si IGBT和SiC MOSFET智能混合功率模块的研究

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中文摘要
为了满足高功率密度、高能效、高可靠性和大容量电力电子装置对高性能电力电子器件技术和低成本产品的迫切需求,本项目拟开展由大电流Si IGBT和小电流SiC MOSFET组成的智能混合功率模块技术的研究,结合IGBT低成本、大载流能力和SiC MOSFET低开关损耗、高开关频率的优点,同时将智能驱动、故障检测和快速保护集成一体化,打破IGBT模块高损耗、低开关频率和SiC MOSFET模块高成本、低可靠性和小功率容量的限制瓶颈。项目首先建立混合功率模块的多物理场耦合模型和多目标优化设计方法,研制1200V/200A模块并测试验证性能;揭示模块的退化和失效机理,从模块设计、芯片配比选型、栅极驱动电压优化等方面探索抑制器件老化和失效的方法;研究模块的智能驱动和保护技术,提出低损耗和结温平衡的驱动方法、对芯片故障的冗余容错控制策略。项目开展为发展我国电力电子器件技术和产业提供一种可能的思路和技术路线
英文摘要
In order to meet the urgent requirement of high power density, high efficiency, high reliability of power electronics systems and satisfy the needs for low-cost and large current rating power electronics devices, this project intends to investigate the intelligent hybrid power module consisting of high-current rating Si IGBTs and low-current rating SiC MOSFETs. The hybrid power module technology combines the advantages of IGBT and SiC MOSFET, which has low cost, large current capability, low switching loss, and high switching frequency. The intelligent hybrid power module integrates the intelligent drive, fault detection, and fast protection function. This technology breaks the bottlenecks of the IGBT module with a large switching loss and low switching and also avoid the drawbacks of SiC MOSFET module with lower reliability and small power capacity. This project builds the multi-physics coupling model first and proposes the multi-objective optimization design method of the hybrid power module. A 1200V/200A hybrid power module plans to be fabricated and tests its electrical performance. Then, the degradation and failure mechanism of the hybrid module is investigated with the accelerating aging test bench. Methods are proposed to suppress the aging of the hybrid power module including module design optimization, chip sizing ratio selection and the gate driving voltage optimization. Finally, an intelligent driving and protection technologies of the hybrid module are carried out. The low switching loss mode and junction-temperature balanced drive mode are proposed to improve the robustness and redundancy of the hybrid module. This project may provide a feasible idea and technical route for the development of power electronic device industry of China.
期刊论文列表
专著列表
科研奖励列表
会议论文列表
专利列表
DOI:10.1109/jestpe.2021.3137154
发表时间:2022-10
期刊:IEEE Journal of Emerging and Selected Topics in Power Electronics
影响因子:5.5
作者:Hengyu Yu;Shiwei Liang;Jun Wang;Xi Jiang;Bo Wang;Y. Yang;Yuwei Wang;Yiqiang Chen
通讯作者:Hengyu Yu;Shiwei Liang;Jun Wang;Xi Jiang;Bo Wang;Y. Yang;Yuwei Wang;Yiqiang Chen
DOI:10.1109/jestpe.2019.2952170
发表时间:2020-03
期刊:IEEE Journal of Emerging and Selected Topics in Power Electronics
影响因子:5.5
作者:Zishun Peng;Jun Wang;Zeng Liu;Yuxing Dai;Guoqiang Zeng;Z. Shen
通讯作者:Zishun Peng;Jun Wang;Zeng Liu;Yuxing Dai;Guoqiang Zeng;Z. Shen
DOI:10.1109/tpel.2020.3015803
发表时间:2021-03-01
期刊:IEEE TRANSACTIONS ON POWER ELECTRONICS
影响因子:6.7
作者:Peng, Zishun;Wang, Jun;Shen, Z. John
通讯作者:Shen, Z. John
DOI:10.1109/jestpe.2019.2947252
发表时间:2020-03
期刊:IEEE Journal of Emerging and Selected Topics in Power Electronics
影响因子:5.5
作者:Zongjian Li;Jun Wang;Zhizhi He;Jiajun Yu;Yuxing Dai;Z. Shen
通讯作者:Zongjian Li;Jun Wang;Zhizhi He;Jiajun Yu;Yuxing Dai;Z. Shen
Online Junction Temperature Measurement for SiC MOSFET Based on Dynamic Threshold Voltage Extraction
DOI:10.1109/tpel.2020.3022390
发表时间:2021-04
期刊:IEEE Transactions on Power Electronics
影响因子:6.7
作者:Xi Jiang;Jun Wang;Hengyu Yu;Jianjun Chen;Zhong Zeng;Xin Yang;Z. Shen
通讯作者:Xi Jiang;Jun Wang;Hengyu Yu;Jianjun Chen;Zhong Zeng;Xin Yang;Z. Shen
高性能高可靠性绝缘栅双极型晶体管的理论模型与设计方法研究
- 批准号:U21A20499
- 项目类别:--
- 资助金额:260万元
- 批准年份:2021
- 负责人:王俊
- 依托单位:
碳化硅双极结型晶体管的研究
- 批准号:51577054
- 项目类别:面上项目
- 资助金额:65.0万元
- 批准年份:2015
- 负责人:王俊
- 依托单位:
国内基金
海外基金
