碳纳米管/二硫化钼混合维度异质结隧穿场效应晶体管的制备与电学性能的研究

批准号:
62004022
项目类别:
青年科学基金项目
资助金额:
24.0 万元
负责人:
徐姣
依托单位:
学科分类:
新型信息器件
结题年份:
2023
批准年份:
2020
项目状态:
已结题
项目参与者:
徐姣
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中文摘要
隧穿场效应晶体管(TFET)的低功耗特性使其有望成为下一代集成电路的核心构成元素。但难以在大的电流变化区间维持陡直的亚阈值摆幅(SS)是TFET发展的主要难题。保证器件源极重掺杂的同时,又能充分过滤掉源极隧穿载流子的高能末尾,是解决上述难题的有效手段。本项目拟以掺杂的一维碳纳米管为源极,二维二硫化钼纳米片为沟道,构建碳纳米管/二硫化钼混合维度异质结TFET。此方案,不仅保证器件具备对栅控高度敏感的超薄二维沟道和能带结构突变的源/沟道异质结区;更着重利用源极碳纳米管的一维态密度(DOS)分布特点,并通过掺杂调控碳纳米管的费米能级至近价带顶,以同时满足源极的高掺杂浓度和隧穿载流子的集中分布两个重要条件,以实现广域陡直的SS。本项目通过对碳纳米管可控掺杂和混合维度TFET的制备及性能分析的研究,拟揭示源极材料DOS的分布特点和掺杂浓度对器件SS的影响规律,为今后发展高性能TFET提供研究经验。
英文摘要
The low-power consumption characteristic of tunneling field effect transistor (TFET) makes the device promising as the core component of next-generation integrated circuit. However, it is difficult to maintain steep subthreshold swing (SS) over a wide current range, which is a main problem that limits the development of TFETs. Heavily doping the source material and simultaneously, fully filtering out the high energy tail of tunneling carriers, is an effective solution to above problem. In this project, we intend to choose one-dimensional doped carbon nanotube and a two-dimensional molybdenum disulfide nano flake as source and channel materials, respectively, to fabricate a carbon nanotube/molybdenum disulfide mixed-dimensional hetero-structured TFET. The proposal ensures that the device consists of an ultrathin two-dimensional channel which is highly sensitive to gate-control and a hetero-structured source/channel junction with an abrupt change of band structure. More importantly, we take advantage of the distribution feature of one-dimensional carbon nanotube’s density of states (DOS), and tune the Fermi level of carbon nanotube towards top edge of valance band with doping technique, so that two important requirements, high doping concentration of source material and centralized distribution of tunneling carriers, can be satisfied at the same time, to realize steep SS in a wide current range. In this project, through the investigations of controllable doping of carbon nanotube, and fabrication and performance analysis of mixed-dimensional TFET, we will reveal the influence of the distribution feature of DOS and doping level of source material on the SS of TFETs, and provide research experience for developing high-performance TFETs in future.
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DOI:10.1021/acsnano.3c06944
发表时间:2023-11
期刊:ACS nano
影响因子:17.1
作者:Hengshan Wang;Yanfeng Yin;Jiao Xu;Jing Li;Yanan Bao;Meiqi An;Lingzhi Tang;Shengye Jin;Wenming Tian;Yiming Yang
通讯作者:Hengshan Wang;Yanfeng Yin;Jiao Xu;Jing Li;Yanan Bao;Meiqi An;Lingzhi Tang;Shengye Jin;Wenming Tian;Yiming Yang
A Vertical PN Diode Constructed of MoS2/CsPbBr3 Heterostructure for High‐Performance Optoelectronics
DOI:10.1002/admi.202101487
发表时间:2021-12
期刊:Advanced Materials Interfaces
影响因子:5.4
作者:Jiao Xu;Jing Li;Hengshan Wang;Chengyu He;Jianliang Li;Y. Bao;Huayi Tang;H. Luo;Xiaochi Liu;Yiming Yang
通讯作者:Jiao Xu;Jing Li;Hengshan Wang;Chengyu He;Jianliang Li;Y. Bao;Huayi Tang;H. Luo;Xiaochi Liu;Yiming Yang
DOI:10.1002/adma.202109867
发表时间:2022
期刊:Advanced Materials
影响因子:--
作者:Jing Li;Jiao Xu;Yanan Bao;Jianliang Li;Hengshan Wang;Chengyu He;Meiqi An;Huayi Tang;Zhiguang Sun;Yurui Fang;Shuang Liang;Yiming Yang
通讯作者:Yiming Yang
国内基金
海外基金
