如何有效地将Si和GaAs应用于同一光电器件中以充分利用两者优势一直是研究的热点。尤其是近年来其在光谱匹配叠层光伏电池上的潜在应用价值又引起了新的关注。晶片键合技术为此提供了一条重要途径，但一直以来对于热失配较大的GaAs和Si 大尺寸低温直接键合技术就鲜有报道，对于界面具有欧姆电学特性的大尺寸GaAs/Si键合技术国内外更没有报道。基于此，本项目申请界面具有欧姆电学特性的大尺寸GaAs/Si 低温键合机理及其在光伏电池上的应用研究。工作首先重点研究GaAs表面不同化学活化处理后的GaAs/Si 直接键合内在机理；之后，通过进一步分析界面热应力研究大尺寸的GaAs/Si低温直接键合；并尝试采用透明导电薄膜作为中间过渡层进行GaAs/Si键合实验获得界面具有光学透过性和欧姆电学特性的GaAs/Si键合片；最后利用该技术制备相关光伏电池的原型器件以探索其应用前景。

How to effectively combine Si and GaAs materials into one optoelectronic devices has attracted considerable interests. Especially its potential applications in the spectral matching tandem photovoltaic cells in recent years has attracted new attention. Although wafer bonding provides an important approach, the technology of large area GaAs/Si low temperature direct bonding is rarely reported. Moreover, research on large area GaAs/Si low temperature bonding technology with ohmic interfacial conductivity has no reports both at home and abroad. According to the above problems, this project concentrates on the research of large area GaAs/Si low temperature bonding mechanism with ohmic interfacial conductivity and its application on photovoltaic cells. First, we conduct research on the mechanism of GaAs/Si low temperature direct bonding under different surface chemical activity conditions on GaAs. Then, according to the analysis of interfacial stress, develop large area GaAs/Si low temperature bonding. try using a transparent conductive film as the intermediate layer for GaAs / Si bonding experiments to fabricate GaAs/Si bonding wafers having optical transmittance and ohmic junctions . Finally, fabricate photovoltaic cell devices using this technology.