未来光电器件要求半导体材料具备高热导率, 高电子饱和速度，高击穿电场等属性，目前以金刚石, SiC, ZnO, GaN等宽禁带材料为代表的第三代半导体, 尽管在基础研究方面已取得了很大进展，然而有限的种类并不能满足所有器件需求。基于前期对Al4C3的系统研究，我们发现其具备较好的场电子发射能力; 通过引入氧元素打破Al-C间的强离子键，Al4O4C展现出宽带隙半导体的特征，具备极好的光子学行为，比如高强度蓝光发射和光波导，说明在Al-C体系中实现新型宽带隙半导体材料的可能性，本课题中, 我们拟将B元素引入到C-Al体系，系统地对C-Al-B三元化合物进行研究, 课题主要包含几个层面: (1)一维纳米结构设计与制备; (2)根据形貌与结构特点，从光学、电学以及光电特性等方面进行物性探索；(3)以所挖掘出的物性为依据，进行器件化研究。希望以此丰富第三代半导体家族，覆盖某些功能盲区。

To be applied in future optoelectric device, there are mandatory features on the semiconductors, such as high thermal conductivity, high electron saturated mobility, high breakdown field and so on. As representative of the third generation semiconductors, although the research on diamond、SiC、ZnO and GaN has progress a lot in fundamental field, it is not enough to cover all of the required functionalities in future application. Based on the previous study of Al4C3, we find it is a good candidate as cold cathode emitter. Moreover, by introducing O element into Al-C, the strong ionic bond would be destroyed, which results in that Al4O4C exhibits the features of wide-band semiconductor with intense blue emission and optical waveguide behavior. This implies the possibility to seek for new type of the 3rd generation semiconductor in Al-C family. In this project, we would like to explore ternary C-Al-B compound systematically, which includes three aspects: (1) the design and fabrication of one dimensional C-Al-B nanostructure; (2) the investigation of the electric, optical and optoelectric properties; (3) the fabrication and performance test of optoelectric device. By doing these, we hope to extend the 3rd generation semiconductor family and realize more functionalities.