碳化硅（SiC）功率芯片较对应的硅功率芯片具有显著的开关性能优势，然而其在开关瞬态与功率模块的多回路时变耦合极大地限制了该优势。已有研究通过减小功率模块寄生电感实现了电流切换阶段的有效解耦，但缺乏在电压切换阶段的应对方法。为解决该关键问题，本项目力求建立新型功率模块电路，同时实现两个阶段的多回路解耦，并以此为基础制作功率模块。具体研究内容包括：1）建立带dv/dt解耦网络的新型电路拓扑，从电路原理上证明研究思想的可行性；2）基于新型电路拓扑，设计相应的封装集成方法并制作功率模块；3）从实验和理论上分析新型功率模块在不同开关模式的性能改善情况。项目申请人在功率模块设计和开关特性研究方面具有近十年的扎实研究基础。成功研制该功率模块将使SiC芯片充分发挥其开关性能，缩短约一半开关时间并减小近30%开关损耗，突破高功率密度电力电子变换器的基础技术瓶颈，并推动SiC芯片在电气化交通工具等场合的应用。

Silicon Carbide (SiC) power semiconductors have prominent switching performance merit compared to their Si counterparts, while the merit is limited due to the multi-loop time-variable coupling issue within power semiconductor modules during the fast switching transient. Research efforts have shown the effective decoupling during the current transition stage through reducing the power module parasitic inductances; however, the way for voltage transition decoupling is still missing. To address this critical issue, the proposed project aims to develop a novel power module circuit capable of simultaneously realizing decoupling functions for both stages, and fabricate a power module prototype based on the novel circuit. The specific research aspects include: 1) Develop a novel circuit topology with dv/dt decoupling network, verifying feasibility of the proposed idea in terms of fundamental circuit theory; 2) Based on the novel circuit topology, design the corresponding packaging and integration method, and fabricate the power module prototype; 3) Analyze the switching performance improvement of the fabricated power module experimentally and theoretically under different switching modes. The project applicant has around ten-year solid research experience in power module design and switching performance characterization. Successful development of the power module enables the full utilization of the SiC devices’ switching performance, reduction by half of the switching time and around thirty percent of the switching loss, which would eventually contribute to the breakthrough of fundamental technologies for high power density power electronics converters as well as facilitate the wide adoption of SiC devices in such applications as transportation electrification.