重离子辐照下基于硅像素探测器的高速闩锁相机原型机研制

在重离子辐照下，闩锁效应是导致芯片损毁的主要因素之一，随着国家在航空航天、核能等领域的发展，对抗辐射芯片的需求逐渐增大，高精度高速芯片闩锁效应检测将提高抗辐射芯片的研发效率。激光脉冲和微束扫描是目前芯片微结构闩锁效应测量的主要手段，但扫描时间长是测试效率的重要制约瓶颈。本项目利用单片有源硅像素探测器（MAPS）探测位置精度高、面积大、芯片薄的特点作为重粒子定位装置，结合闩锁保护电路与检测电路，研究在面束流下高速完成芯片闩锁发生概率分布图像测量的原型机。MAPS芯片的闩锁保护机制、闩锁概率密度生成算法、束流类型与强度对探测精度的影响、闩锁检测电路将是本项目的主要研究内容。研究完成的闩锁相机将增强兰州重离子加速器单粒子效应测试能力。

Under heavy ion irradiation, the latch-up effect is one of the main factors leading to chip damage. With the development of the country in the fields of aerospace, nuclear energy, etc., the demand for anti-radiation chips is gradually increasing, and the high-speed chip latch-up effect detection camera will improve the research and development efficiency of anti-radiation chips. Laser pulse and microbeam scanning are the main methods for measuring the latch-up effect of chip microstructures, but the long scan time is an important bottleneck for test efficiency. This project will use monolithic active pixel sensor (MAPS) and the latch protection circuit and the detection circuit to complete the chip latch-up test under the heavy ion beam. The latch-up protection mechanism of the MAPS chip, the latch-up probability density generation algorithm, the influence of the beam type and intensity on the detection accuracy, and the latch-up detection circuit will be the main research contents of this project.This latch-up camera will enhance the testing ability of the Heavy ion beam facility at Lanzhou.