纳米线及异质结材料是研制高性能纳米光电子器件的重要基础，InAs和InSb作为两种高迁移率、易形成欧姆接触和窄带隙半导体材料备受关注。本项目拟利用金属有机化学气相沉积(MOCVD）技术，在大晶格失配Si衬底上垂直生长InAs和InSb纳米线阵列，探索InAs及InSb纳米线阵列的可控生长方法、揭示影响其生长的物理机制、开展其在光电子器件方面的应用研究。即通过调控相关工艺参数，获得高品质，形貌、尺寸和结构可控的InAs和InSb纳米线阵列，揭示催化和无催化在纳米线生长过程中的物理机制，以及衬底取向、材料组分对纳米线形成、形貌、晶体结构等方面的影响。对InAs和InSb纳米线阵列的气体探测特性，利用n型InAs纳米线和p型Si衬底形成异质结所构筑的光电探测器的光响应特性等进行应用研究，建立器件性能与结构参数的关系，为提高器件的性能提供重要科学依据。

Nanowire and its heterostructure materials is an important basis for developing high performance nano optoelectronic devices. InAs and InSb, as two kinds of high mobility, easy to form ohm contact and narrow band gap semiconductor material, have attracted much attention. This project will focus on the heteroepitaxial growth of vertical InAs nanowires and InSb nanowire array under the large lattice mismatch silicon substrate by metal-organic chemical vapor deposition (MOCVD) technique. The study of controllable growth method of InAs nanowires which can be compatible with contemporary CMOS process, will be carried out to elucidate nanowire growth mechanism and explore the development of new types of optoelectronic devices, gas sensing devices as well. We propose an effective way in controlling InAs nanowires array morphology, size and crystal structure by regulating related process parameters, and reveal the function of catalyst and catalyst-free physical mechanism in InAs nanowires growth. At the same time, the applied properties of obtained devices will be systematically investigated in our proposal, such as the photovoltaic characteristics of heterojunctions formed at the interface between the n-type InAs nanowires and the p-type Si substrate, the gas sensing ability of vertical InAs and InSb nanowire array, etc. As a result, we can try to build up the correlation between device performance and structure parameter, which is of significance for device design and application.