Co基Z型六角铁氧体薄膜室温巨磁电耦合效应研究

Co 基Z型六角铁氧体的室温巨磁电耦合效应使得其在磁性存储器等微型电子器件中具有巨大的应用潜力。目前Co 基Z型六角铁氧体方面的研究集中在块体材料方面，纳米尺度薄膜材料的制备和物理性质方面的研究非常少。本项目将针对Co基Z型六角铁氧体薄膜的制备工艺和室温巨磁电耦合效应展开研究。本项目首先将利用脉冲激光沉积法制备Co基Z型六角铁氧体多晶薄膜和C轴面外取向的外延薄膜，研究薄膜组分、制备工艺与薄膜微结构和室温磁电耦合性能之间的关系。然后，选择具有较好磁电耦合性能的薄膜组分，进一步研究Co基Z型六角铁氧体外延薄膜的厚度尺寸效应对薄膜微结构、磁性能和室温磁电耦合性能的影响，结合第一性原理模型理解应变对薄膜磁电耦合性能的影响机制。最后，针对Co基Z型六角铁氧体外延薄膜的室温逆磁电效应展开研究，研究外加电场对薄膜磁性特征的影响规律，探索薄膜在多态信息存储方面的应用潜力。

The Co based Z type hexaferrites have great potential to be used in the microelectronic devices because of its room temperature low field giant magnetoelectric effects. The works about the Co based Z type hexaferrites are focused on the bulk materials. There are few reported works on the nanoscale Co based Z type hexaferrite thin films. This project is going to investigate the preparation skills and room temperature giant magnetoelectric effects of Co based Z type hexaferrite thin films. Firstly, the Co based Z type hexaferrite polycrystalline and expitaxial thin films will be prepared by plused laser deposition method.The effects of the film composition and preparation conditions on the microstructures and room temperature giant magnetoelectric effects of those Z type hexaferrite films will be studied. Then, some of the expitaxial films with good magnetoelectric effects will be chosen. The effects of film thickness on the microstructures and room temperature magnetoelectric effects of the Co based Z type hexaferrite films will be studied. The experimental results will be compared with the first principle calculation results to understand the physical mechanisms of the effects of strain on the magnetoelctric effects. Lastly, the inverse magnetoelectric effects of the Co based Z type hexaferrite expitaxial films will be studied. The multistate storage potentials of the films will be explored.