由于自旋在操作中具有功率低、速度快和非易失性等优点，自旋电子器件被认为是下一代微电子元件的最佳选择，而稀磁半导体（DMS）因其兼具电荷态和自旋态两方面可调控自由度被认为是制造自旋电子器件的主要材料。目前，DMS的两大难题是如何防止磁性元素团簇所引起的非均匀磁场和如何证明铁磁性的内禀属性。本项目拟采用非磁性元素掺杂和缺陷工程，向氧化物半导体中引入大量载流子和晶格缺陷，通过载流子和具有磁矩的缺陷之间的交换作用，实现载流子介导的室温铁磁性。在鉴定内禀铁磁性方面，本项目拟采用μ介子自旋旋光谱来分析材料的磁化平面状态、极化中子反射来分析其磁化深度剖面，X射线磁性圆二色谱来探测其磁性来源，再结合第一原理计算，综合不同维度的磁性检测数据，从正面论证DMS铁磁性内禀属性的问题。研究磁电性能随载流子和缺陷变化的规律，揭示非磁性元素掺杂DMS铁磁性形成的机理，为今后自旋电子器件的设计与研发提供理论与试验参考。

Spintronics devices are considered the best option for next generation microelectronic components since the spin related devices will have low power, high speed and flow a spin current without dissipation. Due to their freedom of both charge and spin, Diluted Magnetic Semiconductors (DMS) are believed to be primary materials for fabrication of spintronics devices. Currently, there are two big challenges for achieving a qualified DMS for spintronics devices. One is to avoid non-uniform magnetic field distribution caused by magnetic element clusters, other one is to prove intrinsic ferromagnetic property of DMS. This project is aim at development of non-magnetic element doped DMS by introducing a large quantity of carriers and defects, through the exchange interaction between carriers and localized moments (defects), to achieve room temperature carrier mediated ferromagnetism. In connection to identify intrinsic ferromagnetism, we will use low-energy muon spin rotation spectroscopy to determine the magnetic volume fraction of the sample in plane, polarized neutron reflectometry to provide the depth profiles of the magnetic moment distribution, X-ray Magnetic Circular Dichroism to probe the specific magnetic information of any selected element in the sample. Combined with first principles density functional theory (DFT) calculations, we can provide sufficient evidence of the existence of intrinsic ferromagnetism. Furthermore, it is of academic significance and technical importance to clarify the mechanism of ferromagnetism of non-magnetic element doped DMS. The influence of carriers and defect on magnetic and electric properties will be investigated to provide useful information for the design and fabrication of Spintronics devices.