在III-V族半导体中，窄禁带半导体InSb材料具有电子迁移率最高、电子有效质量最小、Lange g因子最大等优势特征，并且具有很强的Rashba自旋轨道相互作用，使得它成为制作新型半导体纳米自旋电子器件的理想材料体系。然而，由于可控生长工艺中的各种技术困难，制备高品质的InSb低维纳米结构一直是困扰科学家们的难题，因此对这类材料的自旋输运特性研究鲜有报道。本项目计划在其团队近期生长高质量立式InSb单晶纳米片和纳米线的前期基础上，通过设计合理的自旋场效应晶体管结构，发展有效和可靠的微纳加工技术手段，利用“自下而上”的方法制备出低维的InSb自旋电子器件，实现自旋注入、自旋量子调控和非局域探测，最终达到利用栅压控制自旋输运行为。本项目不但具有重要的科学意义，而且有利于构建低功耗、高密度、高效率的自旋输运的布线，把逻辑、存储和通信等功能融合在一块芯片上，具有潜在的应用价值。

Among III-V semiconductors, InSb with narrowest band-gap has shown great advantages of the highest electron mobility, smallest effective mass, giant g factor, and strong Rashba spin−orbit interaction. It is considered an ideal candidate for fabricating novel spintronic nano-devices in semiconductors. However, preparation of high-quality InSb nano-structures has always been an inevitable difficulty because of technical problems during epitaxial growth control. So there have been few reports about spin transport behavior of this material. Recently, our group have successfully grown high-quality, single-crystalline, free-standing InSb nanosheets and nanowires. Through the reasonable design of spin field effect transistor (spin-FET) structure, this project aim to achieve spin injection, spin quantum manipulation, and non-local spin detection in InSb, in order to modulate its spin transport behavior by applying gate voltage. On the other hand, we plan to develop effective and reliable micro-nano fabrication techniques, and fabricate low-dimensional InSb spintronic devices by bottom-up method. This research could not only ascertain the scientific significance, but also yield potential value on constructing spin-dependent information transport with low power consumption, high density and high efficiency, which combines logic, storage and communication on only one chip.