磁随机存储器(MRAM)具有非易失性、速度快、可靠性高等优点，是未来随机存储器的最佳选择。当前基于自旋转移矩效应的STT-MRAM在器件缩小到数十纳米的尺寸时面临着着严峻挑战。一方面，传统磁性材料的难以保证磁化的稳定性；另一方面，写入电流密度过大导致功耗、发热增加。针对这些难题，本项目拟基于新型垂直磁化L10相Mn基二元合金和反铁磁重金属，开展自旋轨道矩(SOT)的研究。具体内容包括：(1)采用分子束外延方法生长具有强垂直磁各向异性的L10相MnAl、MnGa，并对其结构和磁性调控优化；(2)基于MnAl、MnGa和反铁磁重金属设计制备磁隧道结器件；(3)结合反铁磁交换偏置研究无磁场辅助SOT磁化翻转机制。预期通过本项目的实施，探索L10相Mn基二元磁性合金在SOT-MRAM中的应用，实现低电流密度、高翻转速度的SOT磁化翻转，为发展低功耗、高性能的MRAM提供材料基础和物理指导。

Magnetic random-access memory (MRAM) is a non-volatile, high operation speed and high reliability memory technologies for the future RAM. Currently the spin transfer torque based STT-MRAM is facing critical challenges when its device scaled down to tens of nanometers. Firstly, conventional magnetic materials couldn't maintain the stability of the magnetization; Secondly, the larger current density for writing process will increase the power consumption and heat. In order to solve these problems, here we plan to study the spin orbit torque in magnetic tunnel junctions based on the novel L10 phase perpendicular magnetic Mn-based binary alloys and antiferromagnetic heavy metals. We will focus on the following: (1) the MBE growth of the L10 phase MnAl and MnGa with strong perpendicular magnetic anisotropy, and the optimization of their structure and magnetic property. (2) Fabricate magnetic tunnel junction devices with L10 phase MnAl, MnGa and antiferromagnetic heavy metals. (3) Study the mechanism of SOT switching without external magnetic field using the exchange bias of antiferromagnetic heavy metals. Our research will explore the application of L10 phase Mn-based alloys in future SOT-MRAM, provide the new materials and mechanism for developing practical low-power and high-performance MRAM devices.