大规模集成电路和半导体芯片技术已成为先进制造业和信息科技的核心基础，是推动国民经济可持续发展的重要驱动和国家安全的关键屏障。本项目针对我国在光刻胶材料领域的技术落后现状和对高端光刻胶材料的迫切需求，创新设计策略并制备具有可控化学、拓扑、序列结构的触发解聚型和辐照交联型单分子嵌段聚合物，系统研究它们在本体和溶液相中的自组装行为和解聚/交联动力学过程；利用触发解聚型高分子固有的信号放大机制和单分子嵌段聚合物微相分离，系统评估它们光刻胶方面的实际应用效果。本项目的设计思路从根本上避免引入光酸放大机制，从而规避传统光刻胶在分辨率、线边缘粗糙度、灵敏度三者之间的竞争性矛盾，有望发展具有高灵敏度高分辨率和低图形粗糙度的高端光刻胶材料。本项目的顺利实施将助力我国在高端光刻胶材料领域实现快速发展。

Large-scale integrated circuits and semiconductor chip technologies have been recognized as the core foundation of advanced manufacturing and information technology, acting as the key driving force for sustainable growth of national economy and an indispensable safeguard for national security. Aiming to expedite the development of advanced photoresist technology and meet the urgent needs of high-end photoresist materials in China, this project attempts to innovate the design and synthesis of monodisperse oligomeric diblock copolymers with controlled chemical composition, chain topology, and sequence structures, which undergo self-immolative cascade depolymerization or crosslinking upon irradiation with lithography-relevant light sources. The bulk film and solution self-assembling behavior of these monodisperse diblock copolymers and irradiation-triggered depolymerization/crosslinking processes will be investigated in-depth. Exploiting the intrinsic signal amplification feature of self-immolative polymers and microphase separation of monodisperse diblock copolymers, their actual performance as photoresist materials will be systematically evaluated. The design concept of this project completely avoids the usage of photoacid-relevant signal amplification mechanism, thus likely resolving the long-standing contradiction among the resolution, line edge roughness (LER), and sensitivity parameters of conventional photoresists. It is highly probable to develop high-end photoresists with high sensitivity and resolution and low LER on the basis of the proposed monodisperse oligomeric diblock copolymers. The successful implementation of this project will help achieve China's leap-forward development in the field of high-end photoresist materials.