基于HEMT器件的AlGaN/GaN异质2DEG-MSM结构紫外探测器具有响应速度快的优势，但由于该结构器件受空穴收集困难的限制，导致时间响应出现长长的拖尾现象，影响器件性能的进一步提高。本课题拟研究基于垂直电场分布的AlGaN/GaN/AlN双异质结紫外探测器，采用AlGaN/GaN/AlN 双异质结构，使器件同时具有2DEG和2DHG沟道，达到进一步提高器件响应速度和量子效率同时消除拖尾现象的目的。并通过理论模拟和实验分析相结合的方法，揭示电荷浓度、工艺条件、器件尺寸参数对响应速度和量子效率的影响规律以及双沟道之间的相互作用机理；结合模拟和实验结果澄清器件载流子的输运机制和器件内部电场分布规律，获得进一步提升器件响应速度和量子效率的途径，对更高性能紫外高速探测器的实现具有重要的指导意义。

AlGaN/GaN heterostructure 2DEG-MSM UV photodetectors based on HEMT device have the advantage of high speed. However, long tail of time response due to the restriction of holes collection, affecting the performance of the device to a further level. This project will investigate AlGaN/GaN/AlN double heterostructure ultraviolet photodetectors based on vertical electric field distribution. A structure with the combination of 2DEG and 2DHG channels should be able to compensate the shortcomings of individually using each and provide a potential solution to further improve the response speed and quantum efficiency by collecting the holes in 2DHG channel. Combination of simulation and experimental results clarify the effects of charge concentration, process condition and device structure on response speed and quantum efficiency. Electrical field distribution was simulated and transport mechanisms of photogenerated carriers were analyzed in order to explain the observed phenomenon. This characteristic demonstrates the potential of the AlGaN/GaN/AlN double heterostructure ultraviolet photodetectors in the development of high-speed UV optoelectronic integrated devices.