热驱动下的纳米混合信号集成电路SET脉冲传播机理及影响评估

单粒子瞬态（SET）效应对辐射环境应用集成电路造成日益严重的威胁。而针对纳米集成电路片上非均匀温度分布的SET脉冲传播机理与作用机制尚不清楚，极大阻碍了纳米工艺水平下芯片抗SET加固技术开发和抗加效能提升。本项目以非均匀温度环境下SET脉冲的电热耦合特性为研究对象，对纳米混合信号集成电路SET脉冲传播机理与影响机制进行基础科学研究。具体内容包括：理论分析与计算片上热源、散热和热传输线效应等多因素协同作用下纳米互连线非均匀温度分布规律；研究非均匀温度分布互连线上SET脉冲的时域解析表征方法和特征提取；通过理论计算、仿真模拟和单粒子辐照试验，研究温度梯度下模拟单元及整体电路对数字SET脉冲的响应模式。本项目旨在揭示纳米混合信号集成电路非均匀温度分布条件下SET脉冲的传播机理和作用机制，为有效抑制SET效应引发的电路故障和推动国产抗辐照加固关键元器件研制水平持续提升提供坚实的理论和技术支撑。

The single event transient (SET) effect is posing a more and more serious threat to the integrated circuits in radiation environment applications. However, the SET pulse propagation and influencing mechanisms for non-uniform temperature distribution case on nanometer IC chips are still unclear, which puts an enormous hindrance to the development of SET hardening techniques and improvement of radiation hardening capabilities. In this project, a basic scientific research on the propagation and influencing mechanisms of SET pulse in nanometer mixed-signal integrated circuits is carried out with the electro-thermal coupling characteristics of SET pulse in non-uniform temperature environment as the research object. The specific contents in this project include: theoretical analysis and calculation of the non-uniform temperature distribution law of nanometer interconnect under the synergistic effect of multiple factors such as heat source, heat dissipation and heat transfer line effect; the time domain analytical characterization and feature extraction of SET pulse on non-uniform temperature distribution interconnect; response mode analysis of the affected analog unit and the whole circuit to digital SET pulse under temperature gradient by means of theoretical calculation, simulation and single event irradiation experiment. The aim of this project is to reveal the propagation and influencing mechanisms of SET pulse in nanometer mixed-signal integrated circuits under the condition of non-uniform temperature distribution, which provides a solid theoretical and technical support for effectively inhibiting the circuit damage caused by SET effect and continuously promoting the development level of domestic radiation hardened key components.