等离子体处理实现β-Ga2O3表面氧空位缺陷与非晶化调控及其对深紫外光探测特性的影响
结题报告
批准号:
11975093
项目类别:
面上项目
资助金额:
65.0 万元
负责人:
卢寅梅
依托单位:
学科分类:
等离子体与物质相互作用
结题年份:
2023
批准年份:
2019
项目状态:
已结题
项目参与者:
卢寅梅
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中文摘要
β-Ga2O3因直接超宽带隙(4.9 eV)及稳定的热力学和化学性质特别适于日盲紫外光电器件开发。氧化物中常见的O空位(Vo)缺陷可提供本征载流子而利于提高光增益,也作为陷阱延缓光生载流子复合而限制器件响应速度。本项目提出采用O和Ar等离子体与Ga2O3表面相互作用,一方面精确调控Vo浓度,实现低本征暗电流与高光增益的合理平衡,一方面通过非晶化引入复合中心来提高器件响应速度。项目拟采用PLD生长含有特定浓度Vo缺陷和高质量外延β-Ga2O3薄膜,分别通过改变O和Ar等离子体处理工艺参数来精细调控薄膜中Vo浓度和非晶层厚度;通过表面表征和光电响应测量结合第一性原理模拟计算,建立Vo浓度和非晶层厚度与薄膜光生载流子寿命及输运特性间的关联,揭示其影响规律与微观机制。本项目可为β-Ga2O3材料及深紫外光探测器研究提供理论依据和技术基础,也对一般氧化物半导体Vo调控研究及器件开发具有普适指导意义。
英文摘要
β-Ga2O3 is particularly suitable for the development of solar-blind UV optoelectronic devices due to its direct wide bandgap (4.9 eV) and stable thermodynamic and chemical properties. The O-vacancy (Vo) defects commonly existed in oxides can provide the intrinsic carriers and help to increase the light-gain, and on the other hand can delay the recombination of photo-generated carriers as traps and limit the response speed of the device. This project proposes to use the interaction between O and Ar plasma and the Ga2O3 surface, on the one hand, to accurately regulate the Vo concentration to achieve a reasonable balance between the low intrinsic dark-current and high light-gain, on the other hand, to improve the response speed of the device through the introduction of amorphous (disordered) phase as recombination centers. The project is intended to use PLD to grow β-Ga2O3 films with a specific concentration of Vo defects and with high epitaxial quality, respectively, and well control the Vo concentration and amorphous-layer thickness in the films by changing the processing parameters of O and Ar plasma treatment. Through surface characterizations and photoelectric response measurements combined with the first-principles calculations modeling, the correlation between the Vo concentration/ amorphous-layer thickness and the carriers life/ transport characteristics of the film is established, and their influence law and microscopic mechanism are revealed. This project can provide theoretical guide and technical basis for the studies of β-Ga2O3 materials and deep-ultraviolet detecting devices, and can also offer general guide for the research of Vo regulation and device development for other oxides semiconductors.
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DOI:10.1016/j.aca.2022.339653
发表时间:2022-02
期刊:Analytica chimica acta
影响因子:6.2
作者:Rui Zhou;Bo Tu;D. Xia;Hanping He;Zhiwei Cai;Nan Gao;G. Chang;Yunbin He
通讯作者:Rui Zhou;Bo Tu;D. Xia;Hanping He;Zhiwei Cai;Nan Gao;G. Chang;Yunbin He
DOI:10.1007/s00604-022-05328-z
发表时间:2022-05
期刊:Microchimica Acta
影响因子:5.7
作者:D. Xia;Panpan Jiang;Zhiwei Cai;Rui Zhou;Bo Tu;Nan Gao;G. Chang;Hanping He;Yunbin He
通讯作者:D. Xia;Panpan Jiang;Zhiwei Cai;Rui Zhou;Bo Tu;Nan Gao;G. Chang;Hanping He;Yunbin He
High-performance self-driven ultraviolet photodetector based on SnO2 p-n homojunction
基于SnO2 p-n同质结的高性能自驱动紫外光电探测器
DOI:10.1016/j.optmat.2022.112571
发表时间:2022-07
期刊:Optical Materials
影响因子:3.9
作者:Bohan Liu;Mingkai Li;Wang Fu;Pan Ye;Wentao E;Xinglin Xiao;Haoran Wei;Yinmei Lu;Yunbin He
通讯作者:Yunbin He
DOI:10.1021/acs.cgd.1c00566
发表时间:2021-09
期刊:Crystal Growth & Design
影响因子:3.8
作者:Yang Wantian;Xiao Xinglin;He Huanfeng;Tong Guoliang;Hu Jiarui;Xiao Xingfu;Chen Junnian;Li Mingkai;He Yunbin
通讯作者:He Yunbin
DOI:10.19756/j.issn.0253-3820.201594
发表时间:2021
期刊:《分析化学》
影响因子:--
作者:陶甜;叶嵩;马明宇;高难;蔡志伟;常钢;何云斌
通讯作者:何云斌
国内基金
海外基金