大面积柔性SnSe/Si异质薄膜的取向生长与高效光电探测性能研究

由于具有优良的电、光、热电和力学等性能，SnSe已成为研制新一代光电子器件的热点材料之一。但是，它在大面积生长和新型器件构筑等方面仍极具挑战性，导致其无法满足实际器件需求。本项目拟将磁控溅射与元素反应相结合，发展一种“两步溅射法”生长技术，在可弯曲Si晶体表面制备高质量SnSe薄膜，并通过结构设计和性能调控，研制具有高效光电探测性能的柔性SnSe/Si异质薄膜器件。（1）设计前驱层叠加结构并控制反应过程，研究生长机理及衍变规律，实现SnSe薄膜的取向可控性。（2）研究构效关系，将两种材料的优势性能特征进行有效叠加，形成光-热-电多能量高效转化和协同作用，提升SnSe/Si异质结器件的光电探测能力，并揭示性能的产生与变化机制。（3）采用理论计算与试验测量相结合方法，建立微观应变与宏观性能之间的联系，阐明器件中存在的应变效应。本项目将为发展新型可穿戴光电子器件提供新的技术思路和科学依据。

Due to excellent electrical transporting, optical, thermoelectrical and mechanical properties, SnSe has attracted much interest in the area of developing high-performance optoelectronic devices. However, the studies on the large-area growth and the construction of new-type device configuration still face great challenge, resulting that the device performance can’t meet the requirements of the practical optoelectronic devices. In this project, through the combination of conventional magnetron sputtering and the process of the elements reaction, high-quality SnSe thin films will be grown on the surface of ultrathin bendable Si semiconductors by using a two-step sputtering technique and the flexible SnSe/Si heterostructures with high-performance photodetecting characteristics will be fabricated. Firstly, by designing the superposition structure of the precursor layers and controlling the reaction procedure, the controllable oriented growth of the films will be realized. Secondly, by the studies on the relationship between the microstructural characteristics and properties, the excellent properties of the two kinds of materials will be integrated effectively and the high-efficient conversion and synergistic action of the combined optical-thermal-electrical energies, leading to the great promotion of the photodetecting performance of the SnSe/Si heterojunctions. Finally, by the combination of the experimental measurements and simulations, the strain effect in the devices will be clarified. The above studies would supply new technical route and scientific supports for developing novel wearable optoelectronic devices.