氧化铟是一种直接宽带隙的半导体材料，常温下的体材料其并不发光，但近年的研究表明，纳米结构的氧化铟也出现荧光现象，其范围由近紫外到可见光区域，展现宽频带荧光特性。但这些发光特性的研究都还处在新现象的发现阶段。有必要研究它们相应的发光机理，拓宽其应用范围。氧化亚铜是另外一种在太阳能电池和光催化材料等方面有重要应用前景的材料，是少有的P型半导体氧化物材料，近年来研究发现其在纳米结构时，也存在n型结构，但目前这仍然是学术界研究争论的焦点。同时如何提高其光活性的稳定性，也是研究热点。本项目通过不同的制备方法，从实验上制备出不同氧缺陷结构的氧化铟纳米材料，研究其发光特性，并从理论上进一步证实发光与氧缺陷类型的关系。同样采用不同的制备方法制备出不同形貌及大小的氧化亚铜纳米材料，通过表面钝化，研究它的表面结构与光活性的关系，寻找相应光活性稳定的结构。

Indium oxide is a kind of direct band-gap semiconductor, and it has not photoluminescence at room temperature. Recent investigations suggest that indium oxide nanostructures can display fluorescence phenomena located at near UV to the visible light region, and broad band fluorescence characteristics can be observed. However, researches to their light-emitting characteristics are still in initial stage, needs to clarify their fluorescence mechanism and explore its potential applications. Cuprous oxide is another important material, which has potential application in solar cells and photocatalytic. It is a rare P-type semiconductor oxide material. Meanwhile, it also displays n-type structure in some nanostructures. Their intrinsic physical mechanisms are still controversy. How to improve the stability of their optical activity also becomes a hot issue. In this project, different morphology nanostructures with different type oxygen vacancy are fabricated by various experimental methods, to disclose their luminescence properties via experimental analysis and theoretically calculation. The similar methods are adopted to obtain different size and morphology cuprous oxide nanostructure. Surface passivation technology is used to study their relation between surface structure and optical activity, meanwhile, looking for a stable structure with high optically active.