二维过渡金属硫族化合物（TMDCs）具有丰富的组成与优异的材料特性，在纳电子器件领域展示出巨大的应用前景。然而，二维TMDCs半导体沟道与金属电极接触界面存在肖特基势垒，严重制约了二维TMDCs器件的性能与发展。针对此关键问题，本项目提出基于化学合成方法直接得到的金属性二维TMDCs图案作为新型器件电极，构筑全二维TMDCs器件，进而利用其功函数特性有效调控器件肖特基势垒、优化器件性能的新思路：通过对前驱体组成与供应方式的理性设计，实现功函不同的金属性二维TMDCs的图案化控制合成，获得形貌满足器件结构需求的多种电极候选材料；以此为切入点，系统研究这类材料的本征性质，着重关注导电/热性等实用化电极的关键性能指标；在此基础上，以金属性二维TMDCs图案为电极，基于其功函数特性，构筑高性能、多元化的全二维原子晶体电子器件，并阐明接触界面电学输运机制，探索器件性能优化与电极材料设计的新策略。

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have shown promising potential in nanoelectronics due to their diverse compositions and excellent properties. However, the Schottky barriers at the interface between the 2D TMDCs semiconductor and the metal electrode have greatly limited the performance and development of 2D TMDCs devices. In view of the above key issue, we propose a new approach for effectively controlling the Schottky barries and performance of devices by utilizing metallic 2D TMDCs patterns with desired shapes and different work functions directly as novel electrodes. To achieve the patterned synthesis of metallic 2D TMDCs for candidate electrodes, the composition and supply mode of the precursors are rationally designed. Then, we systematically investigated the intrinsic properties of as-grown TMDCs which are critical parameters for evaluating the possibility of using this material as contacts. Finally, the high-performance and multifunctional electronic devices based on all 2D atomic crystals are fabricated and the electrical transport mechanism at contact interface is revealed. Our work will explore effective strategies for the optimization of device performance and the design of electrode materials.