红外功能器件事关国家战略安全。国际热门的InAsSb纳米线被认为是实现光电器件小型化的重要选择。当前InAsSb纳米线研究主要集中在材料生长、优化和器件制备与性能提升上，而事关光电特性的电子结构和载流子复合特性等机理问题仍有待解决。关于InAsSb纳米线红外调制光谱研究因方法局限也少见报道。. 本项目创新点在于，基于我们变条件集成红外调制光谱方法优势，开展窄禁带InAsSb纳米线红外调制光谱及其温度、激发功率和外磁场的演化行为研究，探究其等效禁带宽度、带边缺陷能级、电子散射、载流子辐射/非辐射复合、表面缺陷以及激子特性等关键基础机理问题，形成电子能带结构和载流子复合特性的Sb组分、形貌尺寸和表面结构相关性描述，获取激子折合质量、结合能等物理参数，为InAsSb纳米线若干应用问题的理解和材料器件的优化提供基础支持。在红外调制光谱应用于新型光电材料物理研究中取得新结果，助推国家重点实验学科发展。

Infrared function devices are crucial for the national strategic security. InAsSb nanowire as an attractive semiconductor has been considered as a candidate of micro infrared opt-electronic devices. Recent studies of InAsSb nanowires were focused on the growth and optimization of materials, and the fabrication and improvement of devices, the electronic structure and the carriers recombination properties are as key issues of opto-electronic properties unresolved, and infrared modulation spectroscopy study is even unavalable due to infrared limitation...The distinct innovative aspect of the project is to reveal the electronic behavior of the narrow-gap InAsSb nanowires on basis of the advantages of the unique condition-varied infrared modulation spectroscopy. The infrared spectra and their dependence on temperature, excitation and magnetic field are analyzed; The effective band gap, band edge levels, electron scattering, radiative/nonradiative recombination, surface defects and exciton properties are studied; The relationship between electronic structure/carriers recombination and Sb content/morphology/surface structure is established; And the reduced mass and the binding energy of the exciton are deduced. The results provide the theoretical reference for the application understanding and the material/device improving of InAsSb nanowires. The project will produce the new results of the infrared modulation spectroscopy application on new material physics research, which contribute to the national laboratory fundamental science progress.