本项目将研究TSV通孔解析模型、TSV通孔之间耦合模型及差分隔离模型、IPD器件模型、器件之间隔离模型等方面的关键技术问题。考虑TSV的长度、直径和间距等因素，通过微带或带状线匹配，建立匹配前后TSV通孔的电阻、电感、电容的毫米波解析模型。研究匹配后TSV结构参数对其回波损耗、插入损耗等电磁参数的影响。针对TSV通孔之间信号耦合问题，建立TSV通孔之间耦合模型。采用差分信号输入的方式，建立匹配前与匹配后的TSV差分隔离模型。采用IPD/TSV工艺，建立常用的IPD低通滤波器、带通滤波器、巴伦、耦合器、双工器的仿真模型，探索和总结IPD微波毫米波无源器件的设计方法以及内在的三维布局规律。通过两个毫米波无源器件上下左右位置关系，研究3D堆叠元器件之间的相互影响。通过TSV或谐振腔接地的隔离形式，探索和总结元器件隔离方面的关键基础科学问题，为三维微波毫米波集成电设计提供的理论基础。

The project will study the key issues of equivalent model, coupling model, differential isolation model for through silicon via (TSV), and device model and isolation model for integrated passive device (IPD). Considering the length, diameter, dielectric thickness and spacing of TSV, based on the micros-trip or strip-line matching method, the electromagnetic models of through-holes resistor, inductor, and capacitor for TSV will be established to analyze the effects of TSV structure parameters on return loss, insertion loss and of magnetic parameters after match. For the coupling problem between TSV, TSV differential isolation model is studied as well. The TSV differential isolation model is proposed based on the differential signal input method. Using IPD/TSV technology, the simulation model of IPD low-pass filter, band-pass filters, baluns, and couplers, duplex will be established, exploring and summarizing the design methods and the internal three dimensional layout rules of IPD microwave and millimeter-wave passive devices. Considering the way and multi-level routing of three-dimensional IPD, the microwave and millimeter-wave IPD/TSV are studied and the isolate techniques are optimized to provide the necessary theoretical and technical foundation for three-dimensional integration technology applied to future microwave and millimeter-wave integrated circuit design.