全透明非挥发存储器是实现透明电路不可缺少的元器件。本项目在前期硅基金属量子点浮栅型非挥发存储器研究基础上，提出了基于氧化物半导体透明薄膜晶体管的金属量子点浮栅型全透明非挥发性存储器，以存储器栅叠层的能带设计为指导，金属量子点透明浮栅的形成为主线，拟开展以下研究工作：（1）通过自组装的方法，采用低温工艺，制备分布于透明绝缘介质膜中的高功函数金属量子点浮栅结构，控制量子点的大小和密度，获得高光透过率的同时，实现大存储窗口、高电荷存储可靠性；（2）控制氧化物半导体沟道薄膜质量及其与隧道栅氧化层的界面特性，实现高迁移率；（3）采用ITO等透明电极技术，优化晶体管制备工艺，实现全透明薄膜晶体管非挥发存储器原型器件的制作。本项目可望获得具有原始创新性和自主知识产权的新型透明薄膜晶体管非挥发性存储器。

Transparent electronics offers an opportunity to develop optoelectronic devices for "see-through" display technologies and other applications. Transparent nonvolatile memory (NVM) is indispensable to realize transparent circuits. So far, the technology of transparent NVM is still in its infancy. The reliability is a big chanllenge. In this project, we proposed a new type fully transparent NVM with metal nanodots (MNDs) floating gate based on oxide semiconductor thin-film transistor (TFT). Here,the transparent oxide semiconductor TFT is a key element of transparent circuts. In such memories, each nanoparticle is electrically isolated from the rest, so that the charge retention time can be improved. In addition, for MNDs NVM, MND with a high work-function can provide better data retention due to the formation of a deep quantum well. Another advantage is that metal nanodots have higher density of states around Fermi-level so that the requirement of high charge storage capacity can be realized. Because MND with nanosize embedded in transparent insulator, the high transparency in visible light range can be expected. To realize the transparent memory with high performance, the flowing researches will be demonstrated: (1) MNDs floating gate deposition by self-assembly method with low process temperature;(2)MNDs deposition mechanism and controling of MNDs size and density; (3) Energy band engineering of NVM through controlling MND work-function; (4) Improvement of interface quality between tunnel oxide dielectric and oxide semiconductor channel layer to realize high mobility of TFT; (5) Process integration of transparent electrode such as ITO and MND floating gate into oxide semiconductor TFT to fabricate fully transparent NVM. The project is expected to have the original innovation and independent intellectual property rights in transparent NVM.