钙钛矿结构CaIrO3薄膜分子束外延生长及原位角分辨光电子能谱研究

批准号:
12004405
项目类别:
青年科学基金项目
资助金额:
24.0 万元
负责人:
刘正太
依托单位:
学科分类:
强关联体系
结题年份:
2023
批准年份:
2020
项目状态:
已结题
项目参与者:
刘正太
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中文摘要
拓扑半金属的低能态电子激发符合狄拉克方程,使其呈现出许多新奇的物理性质,在拓扑量子计算和自旋电子学等方面有巨大的应用潜力。随着研究的不断深入,尤其在拓扑超导态和磁性量子输运等方面,科学家们发现拓扑半金属材料中的电子关联效应具有重要的科学研究价值。最近的研究显示钙钛矿结构CaIrO3拥有极高的电子迁移率和明显的量子振荡,是少数被证实具备强电子关联的Dirac半金属材料。但角分辨光电子能谱技术对这类钙钛矿结构材料无法进行有效的电子结构表征,从而导致缺乏研究其电子关联效应的关键能谱信息。本项目拟采用氧化物分子束外延技术实现高质量CaIrO3外延薄膜的制备,进而利用原位角分辨光电子能谱技术直接测量该体系中的电子结构,包括Dirac线性能带和无能隙的半金属电子态,进而结合理论计算深入探究其电子-电子关联效应、自旋轨道耦合及晶体结构等多自由度相互作用机理。
英文摘要
The low-energy state electrons excitation of topological semimetals is in accordance with the Dirac equation, which induces many novel physical properties, and has great potential for applications in the topological quantum computing and spin electronics. With further research in superconducting states and magnetic quantum transport, scientists have found that the electron correlation in topological semi-metallic materials is worthy of scientific attention. According to recent research, the perovskite CaIrO3 has extremely high electron mobility and obvious quantum oscillation and is one of the few candidates of correlated topological semimetals that have been experimentally identified. However, the perovskite structure of CaIrO3 restricts the experimental research. In this project, we intend to prepare perovskite CaIrO3 epitaxial films by molecular beam epitaxy (MBE) technology, and then, use in-situ angle-resolved photoemission spectroscopy (ARPES) to directly observe the electronic structure in this materials, including Dirac linear bands and semi-metal states. Combined with theoretical calculations, we can promote the study on the interaction mechanism of electron-electron correlation, spin-orbit coupling, and crystal structure.
期刊论文列表
专著列表
科研奖励列表
会议论文列表
专利列表
DOI:10.1038/s41467-023-40515-3
发表时间:2023-08-14
期刊:Nature communications
影响因子:16.6
作者:Jiang Z;Liu Z;Ma H;Xia W;Liu Z;Liu J;Cho S;Yang Y;Ding J;Liu J;Huang Z;Qiao Y;Shen J;Jing W;Liu X;Liu J;Guo Y;Shen D
通讯作者:Shen D
Gaseous Catalyst Assisted Growth of Graphene on Silicon Carbide for Quantum Hall Resistance Standard Device
气态催化剂辅助碳化硅上石墨烯生长用于量子霍尔电阻标准器件
DOI:10.1002/admt.202201127
发表时间:2022-12-04
期刊:ADVANCED MATERIALS TECHNOLOGIES
影响因子:6.8
作者:Chen, Lingxiu;Wang, HuiShan;Wang, Haomin
通讯作者:Wang, Haomin
DOI:10.1007/s42864-023-00209-1
发表时间:2023-03
期刊:Tungsten
影响因子:--
作者:Jianlin Ding;Zhengtai Liu;Zhe Huang;Zhicheng Jiang;Yichen Yang;Zhong Liu;Jishan Liu;Yangbin Guo;Da-Wei Shen
通讯作者:Jianlin Ding;Zhengtai Liu;Zhe Huang;Zhicheng Jiang;Yichen Yang;Zhong Liu;Jishan Liu;Yangbin Guo;Da-Wei Shen
Doping tuned anomalous Hall effect in the van der Waals magnetic topological phases Mn(Sb1-xBix)4Te7
DOI:10.1088/1674-1056/acd629
发表时间:2023
期刊:Chinese Physics B
影响因子:1.7
作者:Xin Zhang;Zhicheng Jiang;Jian Yuan;Xiaofei Hou;Xia Wang;Na Yu;Zhiqiang Zou;Zhengtai Liu;Wei Xia;Zhenhai Yu;Dawei Shen;Yanfeng Guo
通讯作者:Yanfeng Guo
Dual topological states in the layered titanium-based oxypnictide superconductor BaTi2Sb2O
层状钛基氧磷元素超导体BaTi2Sb2O中的双拓扑态
DOI:10.1038/s41535-022-00477-z
发表时间:2022-06-28
期刊:NPJ QUANTUM MATERIALS
影响因子:5.7
作者:Huang, Z.;Liu, W. L.;Shen, D. W.
通讯作者:Shen, D. W.
国内基金
海外基金
