面向红外光学窗口电磁屏蔽的高迁移率MgZnO/ZnO二维电子体系构建与调控

发展下一代航空武器装备雷达隐身技术是国防安全的迫切需求。机载光电系统的光学窗口是隐身战机最重要的暴露目标，而我国现役金属网栅屏蔽光窗存在衍射效应干扰、有效透光率低、耐候性差等缺陷。电磁屏蔽率和透光率之间的矛盾成为电磁屏蔽光窗发展的关键瓶颈。本项目提出利用多层MgZnO/ZnO异质结构形成局域化高迁移率二维电子气，在较少自由电子条件下维持高电导率，从而获得兼具高透光率与电磁屏蔽率的光学薄膜。项目拟采用激光分子束外延技术制备高结晶质量MgZnO/ZnO多层外延薄膜，阐明多层薄膜界面二维电子气的产生与调控机理；系统研究其对不同频率电磁波的电磁屏蔽性能，结合理论模拟与第一性原理计算，剖析MgZnO/ZnO异质界面二维电子气的电磁屏蔽机理，通过优化设计多层结构薄膜实现对宽频段电磁信号的高效电磁屏蔽。通过本项目的实施，有望突破我国航空武器雷达隐身的关键瓶颈，对于开发新一代隐身武器装备具有重要意义。

National defense system eagerly demands the development of aviation weapon radar shielding technology. Optical windows before the airborne photo-electronic equipment is the most vulnerable and detectable target of the stealth fighter. Metal-grid-derived shielding windows generally utilized in China has disadvantages such as diffraction effect induced interference, low effective light transmittance and poor weather resistance. The most challenging bottleneck for the airborne electromagnetic shielding optical windows lies in the dilemma between their shielding rate in the radar range and transmittance in the visible-mid-infrared range. Here, we propose the introduction of multi-layer MgZnO/ZnO heterostructure to form a strong localized two-dimensional electro gas (2DEG) with high mobility, which thereby obtaining an electromagnetic shielding film with high transmittance and electromagnetic shielding ratio. Laser molecular beam epitaxy will be adopted to prepare high-quality MgZnO/ZnO multilayer epitaxial films. The generation and regulation mechanism of two-dimensional electron gas in such multi-layer film interface will be systematically studied, as well as the frequency-dependent electromagnetic shielding performance. Finite-element analysis and the first-principles calculation of 2DEG hosted at MgZnO/ZnO hetero-interface will be conducted to clarify the electromagnetic shielding mechanism for wide-band electromagnetic signals, and to instruct the design of the multilayer-structured film with optimized performance. Through the implementation of this project, it is expected to solve the current wretched bottleneck restricting the radar shielding technique of airborne/shipborne optoelectronic equipment in China, which is of great significance for the development of the next generation stealth weapons.