基于二氧化钒双晶片悬臂梁阵列的新型热传感器件及性能调控
结题报告
批准号:
62004193
项目类别:
青年科学基金项目
资助金额:
24.0 万元
负责人:
杨珏晗
学科分类:
新型信息器件
结题年份:
2023
批准年份:
2020
项目状态:
已结题
项目参与者:
杨珏晗
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中文摘要
二氧化钒因其优异的相变性质而受到广泛研究。由于二氧化钒的相变可被温度调控,因此二氧化钒在热学传感器领域有着很大的应用潜力。在本项目中,我们瞄准二氧化钒纳米线阵列的高质量生长与掺杂,研究通过掺杂调控二氧化钒纳米线阵列的相变性质;制备基于二氧化钒及掺杂二氧化钒纳米线阵列的双晶片悬臂梁阵列,通过调节阵列衬底温度触发二氧化钒相变改变阵列中悬臂梁的曲率,以实现调控阵列衬底界面的润湿性及光反射率;将二氧化钒及掺杂二氧化钒纳米线双晶片悬臂梁阵列用作二维材料的衬底,通过衬底温度变化调控悬臂梁的曲率,以对二维材料施加应力,实现利用热能对二维材料施加应力以调控其光电性质。希望通过本项目的实施,推进二氧化钒纳米线阵列的生长和掺杂机理的研究以及将其作为新型热学传感器件的制备与应用。
英文摘要
Vanadium dioxide (VO2) nanowires have been widely studied due to their excellent phase transition properties. Because the phase transition of vanadium dioxide can be controlled by temperature, vanadium dioxide has great potential in the field of thermal sensors. In this project, we aim at the high-quality growth and doping of VO2 nanowire arrays, and study the phase transition properties of VO2 nanowire arrays by doping; by adjusting the substrate temperature of the arrays to trigger the phase transition of VO2, the curvature of the cantilever in the array can be changed to tune the wettability and reflectivity of the interface of the substrate of the bimorph arrays; the bimorph cantilever arrays based on VO2 and doped VO2 nanowire arrays will be used as the substrate of the two-dimensional materials. The curvature of the cantilevers is controlled by the change of temperature so as to exert stress on the two-dimensional materials, with this method the photoelectric properties of the two-dimensional materials are controlled by the application of thermal energy. Through the implementation of this project, we hope to promote the research on the growth and doping mechanism of vanadium dioxide nanowire arrays, as well as the preparation and application of the new types of thermal sensors.
期刊论文列表
专著列表
科研奖励列表
会议论文列表
专利列表
DOI:10.1002/adma.202206486
发表时间:2022
期刊:Advanced Materials
影响因子:--
作者:Yali Yu;Tao Shen;Haoran Long;Mianzeng Zhong;Kaiyao Xin;Ziqi Zhou;Xiaoyu Wang;Yue‐Yang Liu;Hitoshi Wakabayashi;Liyuan Liu;Juehan Yang;Zhongming Wei;Hui‐Xiong Deng
通讯作者:Hui‐Xiong Deng
Cross-Substitution Promoted Ultrawide Bandgap up to 4.5 eV in a 2D Semiconductor: Gallium Thiophosphate
交叉取代促进二维半导体超宽禁带宽度高达 4.5 eV:硫代磷酸镓
DOI:10.1002/adma.202008761
发表时间:2021
期刊:Advanced Materials
影响因子:29.4
作者:Yan Yong;Yang Juehan;Du Juan;Zhang Xiaomei;Liu Yue-Yang;Xia Congxin;Wei Zhongming
通讯作者:Wei Zhongming
DOI:10.1109/ted.2023.3242932
发表时间:2023-04
期刊:IEEE Transactions on Electron Devices
影响因子:3.1
作者:Jing-Rong Zhou;Tao Xiong;Zheng-Zhao Guo;Kaiyao Xin;Xiaoyu Wang;Honggang Gu;Yueyang Liu;Liyuan Liu;Juehan Yang;Zhongming Wei
通讯作者:Jing-Rong Zhou;Tao Xiong;Zheng-Zhao Guo;Kaiyao Xin;Xiaoyu Wang;Honggang Gu;Yueyang Liu;Liyuan Liu;Juehan Yang;Zhongming Wei
DOI:10.1002/inf2.12258
发表时间:2021-10-19
期刊:INFOMAT
影响因子:22.7
作者:Bai, Ruixue;Xiong, Tao;Wei, Zhongming
通讯作者:Wei, Zhongming
DOI:10.1002/sstr.202200061
发表时间:2022-06
期刊:Small Structures
影响因子:15.9
作者:Wen Yang;Tao Xiong;Yueyang Liu;Juehan Yang;Qun Xu;Zhongming Wei
通讯作者:Wen Yang;Tao Xiong;Yueyang Liu;Juehan Yang;Qun Xu;Zhongming Wei
超宽禁带二维半导体及日盲紫外探测器
国内基金
海外基金