随着光伏技术的迅猛发展，大规模光伏发电成本已经降至每千瓦时11. 2美分，低于美国平均电价。更高效率的第三代光伏电池将为大规模商业应用提供充沛驱动力。得益于可调节的禁带宽度、高的光吸收系数和电子迁移速率，以及稳定的化学物理特性，InGaN/GaN量子点成为研制中间带光伏电池的理想材料。.申请者提出研制一种新型的InGaN/GaN中间带光伏电池，并着重解决能带工程的带内-带间量子跃迁机制、sub-10 nm Top-down工艺、和聚光技术中的应用等数个关键问题。主要创新在于深化量子能带工程在GaN体系的理论研究和应用拓展，并为InGaN/GaN中间带光伏电池的研制提供科学的设计定律和易操作的工艺制程。该器件将为硅基光伏电池突破理论极限提供技术参考，且在高辐照、大温差、强腐蚀、高能量密度需求等特定环境中有潜在应用价值。

With the rapid development, the massive photovoltaics applications cost has decreased to 0.112 $/kWh, as lower as the average electricity price in the United State. The high efficiency third-generation photovoltaic has great potential to further drive the wide commercial applications. Benefit from the adjustable energy bandgap, the high light absorption coefficient, the high electron mobility, and the stable chemistry/physics properties, the InGaN/GaN quantum dot becomes a powerful candidate for developing intermediate band photovoltaics. .We propose to study the InGaN/GaN intermediate band photovoltaics. Our plan focuses on the interband-intraband transition theory, sub-10 nm Top-down process and the concentration technology. The innovations lie on the quantum theory applications and developments in GaN materials system and the scientific design discipline and easy-handle process. This novel optoelectronic device will push researches on breaking the efficiency bottleneck of Si photovoltaics, and also has potential applications in harsh environments such as high-dose-rate irradiation, large temperature difference, strongly corrosion and high energy demand.