半导体低维纳米材料的研究非常重要，对于微电子、光电、生物等领域的发展具有重要意义。在半导体低维纳米材料的研究中，对于该材料的生长控制是其核心之一。即：控制半导体低维纳米材料的尺寸、形貌、成分、晶型等参数，使之生长为期望的状态，具有特定的属性。近些年来，在半导体低维纳米材料的尺寸调控、成分调控、晶型调控等方面已经取了重要进展，但控制其生长方向、形成具有特殊形貌的超级纳米结构的研究才刚刚开始。本项目以CrSi2纳米材料为研究中心，通过气源压力和温度的调控，期望实现CrSi2纳米结构生长方向的精细控制，从而实现CrSi2超级纳米结构的制备，以期应用于生物/化学探测等领域。本项目还对气相生长中，气源浓度和温度对成核晶面和生长晶面的影响做以研究，并将考察CrSi2极性晶面对纳米结构生长方向的影响。

Low-dimensional semiconducting nanomaterials play crucial rules in microeletronics,opto-electronics,biology fields. The controlled growth of low-dimensional semiconducting nanomaterials is one of the important issues.Recently, the control on size,morphology,composition and phase of nanomaterials has made great achievements. However, the fine control on growth directon of semiconducting nanomaterials is on its itial stage. In this project,we focus on the fine control of growth direction of CrSi2 nanostructures, which may have potential application in bio/chemical detection. Pressure and temperature will be adjusted in order to control the growth direction of CrSi2 nanostructures. Growth mechanism related to VS grown nanostructures will be also discussed.what's important,the effect of polar surface of CrSi2 nanowires on growth direction will be studied.