单晶硅片上刻蚀出微小沟槽后在非氧环境下高温加热，能得到真空腔体和单晶硅膜，这种构造称为SON（Silicon on nothing）。本项目拟从SON构造的制备入手，解决制作工艺中的一些关键问题，将此SON构造的制备方法应用到压力传感器的开发中，不需气密性封装就能制作出绝压式、差压式共有的多压力传感器集成的气压传感器芯片系统，实现多范围、高灵敏度的压力测量，同时实现绝对压力和相对压力，静态压力和动态压力的共测，开辟SON结构在集成电路制作领域以外的应用先例。开发具有自主知识产权的气压传感器。

The trench structure of crystal silicon transforms so as to minimize the surface energy, when it is annealed in a deoxidizing ambient. Trench transformation by surface migration results in the empty-space-in-silicon (ESS). The SON structure can be made of SON layer over ESS by this means. In this project, we will focus on the SON structure fabrication, to resolve some key problems in the fabrication process. The formation method of SON will be applied to the pressure sensor development. The absolute pressure sensors and the differential pressure sensor will be fabricated on one chip without any hermetic sealing processes. The integrated pressure sensor, which can measure the pressure with large measurement range and high sensitivity, and can measure the absolute pressure and relative pressure, the static pressure and the dynamic pressure, simultaneously, is an application precedent of SON outside on the VLSI.