一维金属掺杂ZnO 半导体微纳材料的结构、形貌和掺杂元素及剂量对其三阶非线性极化率和时间响应等非线性光学性质具有重要影响。本项目基于化学气相沉积技术，设计并制备不同形貌和剂量的一维IB和IIIA族金属掺杂ZnO半导体微纳材料。拟采用Z-扫描和泵浦探测技术，针对其在超快脉冲激光作用下的多光子吸收和载流子超快动力学过程进行研究；分析结构、形貌和掺杂元素及剂量对其非线性光学性质，及其光开关和光限幅应用性能的影响；建立超快激光激发下载流子弛豫能级模型，采用速率方程对材料多光子吸收和超快载流子动力学特性进行分析。可望在理论与实验上揭示材料多光子吸收和载流子超快动力学过程的物理机制，阐明结构和组分与材料非线性光学性质的依赖关系。本项目将为调控与改善金属掺杂ZnO半导体微纳材料的非线性光学性能提供理论依据和指导，为其在光电器件中应用奠定理论和实验基础。

The structure, morphology, and doped elements and dose of 1D metal doped ZnO semiconductor micro/nano-material imposed the significant effect on its third-order nonlinear susceptibility and response time. This project aims to design the IB and IIIA metal doped ZnO semiconductor micro/nano-material with different morphology and dose based on chemical vapor deposition technology. In this project, the multi-photon absorption and ultrafast carrier dynamics under ultrafast pulses laser will be studied and revealed by using Z-scan and pump detection technology; the effect of the material structure, morphology, doping elements and doses on nonlinear optical characteristics, as well as the application performance of the optical switch and limiter will be analyzed; the carrier relaxation energy level model of ultrafast laser excitation will be found. The multi-photon absorption and ultrafast exciton dynamics characteristics of the materials are analyzed by using rate equations. The physical mechanism of the multiphoton absorption and ultrafast carrier dynamics of materials will be desired to reveal in theory and experiment. The dependence between the nonlinear optical properties of materials and the structures and components will be clarified. This project will provide a theoretical basis and guidance for manipulation and improvement of the nonlinear optical properties of metal doped ZnO semiconductor micro/nano-material, and lay a theoretical and experimental basis for its application in optoelectronic devices.