制备宽度和边缘结构可控制的石墨烯纳米带具有重大价值。如何直接获得纳米宽度的准一维金属生长基底是采用“自下而上”方法实现石墨烯纳米带控制制备的关键问题所在。本申请拟于硅衬底上构筑具有纳米尺寸宽度、幅宽由底端至顶端逐渐递增、侧壁平整、规则排列、底端尖锐的特定几何结构的“V”型沟槽阵列，以此限域液态金属作为生长基底，通过对“V”型沟槽阵列的设计实现石墨烯纳米带阵列的生长位置、间距、长度的精确控制；通过改变沟槽内部的催化金属的厚度来调节用于石墨烯纳米带生长的液态催化金属表面的宽度，实现石墨烯纳米带宽度的调控；通过液态生长金属与“V”型沟槽的界面优化有望探索出石墨烯纳米带边缘构象的调控途径。进而，研究石墨烯纳米带的纳观结构对场效应晶体管（FET）效能的影响规律。本申请为实现石墨烯纳米带结构的精密控制生长和相关器件的构性规律研究提供了新颖可行的策略，对特定结构纳米材料的控制制备具有重要参考意义。

It is of great significance to synthesize graphene nanoribbons with controllable width and edge structure that remarkably determine the material properties. How to achieve quasi one dimensional metal substrate with nanoscale width is a key access to the controllable preparation in the bottom-up way. In this proposal, we design the special “V” shape trenches arrays in the Si substrate, which are geometrically characteristic of nanoscale width gradually increased from bottom to top, flat side wall, regular arrangement, and sharp ditch, to confine the liquid metal for the growth of graphene nanoribbons. This strategy enables the reliable control over the site, space, and length of graphene nanoribbons arrays by the processing of “V” shape trenches. In particular, the width of graphene nanoribbons can be regulated with the width of liquid metal, which is relatively adjusted by the thickness of metal according to the “V” shape geometry; additionally, the edge structure of graphene nanoribbons are expected to be regulated by the interface between liquid metal and side wall of “V” shape trenches. Moreover, we will investigate the performance of field effect transistor (FET) made of the graphene nanoribbons. It is highly desirable that this proposal would open up a novel strategy for accurate control over the nanoscale structure of graphene nanoribbons and elucidation on the structure-performance relationship of graphene nanoribbons-based devices. It is a quotable method to prepare some nanomaterials with special nanoscale structure as well.