作为LED背光技术的改良版本，采用mini-LED背光设计的液晶电视面板，可以实现高对比度和高动态范围。本项目将以提升绿光mini-size LED的发光效率为目标，开展引领未来的绿光LED材料、器件等关键技术的研究。具体的研究内容包括：设计新型InGaN/AlGaN/GaN量子阱结构，改变Al组分和AlGaN层厚度对量子阱界面质量、应变情况和极化电场的影响;通过氮化物外延结构材料表征、第一性原理理论计算、Droop数据的拟合分析，分别从微观结构、电子能态、芯片三个方面，探索Droop效应的物理机制;研究绿光LED器件中激子行为、电子与光子相互作用、载流子输运以及复合机制;研究GaN隧穿结中载流子的输运方式、隧穿机制,分析GaN隧穿结的性能参数与外延结构材料横向电流扩展能力之间的关系;围绕提高InGaN绿光mini-size LED器件光提取、出光角度等方面展开芯片结构设计与关键技术研究。

As an improved version of LED backlight technology, LCD TV with mini-LED backlight can achieve high contrast and high dynamic range. In order to improve the luminous efficiency of green mini-size LED, GaN-based green mini-size LED materials and devices will be studied in this project. Specific research contents are as follows: We will design a new InGaN/AlGaN/GaN quantum well structure and study the effects of Al composition and AlGaN layer thickness on the interface quality, strain and polarization electric field of the quantum well. By using the characterization of nitride epitaxy structure materials, first-principles theoretical calculation and droop data fitting analysis, the physical mechanism of droop effect will be explored from three aspects: microstructure, electronic energy state and devices. We will study exciton behavior, electron-photon interaction, carrier transport and recombination mechanism in green LED devices. We will study the transport mode and tunneling mechanism of carriers in GaN tunneling junctions and analyze the relationship between the performance parameters of GaN tunneling junction and the lateral current spreading ability of epitaxial structural materials. In order to improve the light extraction and output angle of InGaN green mini-size LED devices, we will investigate the device structure design and key technologies.