异质结构界面附近应变场分布的精确调控是实现微器件、微结构稳定而优异光电性能的重要手段，随着以异质结构为核心材料的微器件、微结构数量的增加，针对异质结构的微纳尺度变形场大范围表征技术的需求也越来越迫切。本项目将系统开展扫描透射电子显微镜(STEM)云纹技术研究，创新发展结合STEM云纹和深度层析技术的真三维STEM云纹层析法，并开展基于此方法的原子晶格结构大范围三维重构和三维应变/应力场分布测量技术研究。利用发展的方法和技术，实验研究超晶格结构以及其他异质结构界面区域的三维原子晶格结构和界面附近失配应变/应力的分布情况及其在高温下的演化规律，揭示高温下异质结构界面附近失配应力在微损伤萌生/演化中的作用机制，探索温度应力作用下器件性能下降与异质结构应变/应力场和原子晶格结构变化的联系，为微器件的力学性能、光电性能的研究奠定技术基础，为微器件的失效破坏模型与退化机制研究提供科学的实验依据。

The precise control of strain field distribution near the interface of heterostructure is an important method to realize the stable and excellent photoelectric performance of microdevices and microstructures. Therefore, with the increase of the number of microdevices and microstructures using heterostructures as the core materials, there is an increasingly urgent need for large-scale characterization of micro and nano scale deformation field for heterostructures. This project intends to carry out a comprehensive and systematic research on scanning transmission electron microscope (STEM) moire technology. Combined with STEM moire technology and depth sectioning method, the true 3D STEM moire depth sectioning method has been innovatively developed. Based on this method, the large-scale 3D inversion technique of heterogeneous atomic lattice structure and its 3D strain/stress field measurement were studied. By using the developed method and technology, the reconstruction of the 3D atomic lattice structure, the mismatch strain/stress distribution and its evolution under high temperature were studied in the interface region of the superlatice and other heterostructures. The mechanism of mismatch stress in the initiation/evolution of micro-damage near the heterostructure interface at high temperature were revelated. The relationship between the degradation of device performance and the changes of strain/stress field and the relationship between its degradation with atomic lattice structure were explored under high temperature. The execution of this project will lay a technical foundation for the study of mechanical and photoelectric properties of microdevices, and provide a scientific experimental basis for the study of the failure model and degradation mechanism of microdevices.