课题基金基金详情
宽电压时序推测型高速缓存(Cache)电路与架构优化研究
结题报告
批准号:
61974024
项目类别:
面上项目
资助金额:
60.0 万元
负责人:
凌明
依托单位:
学科分类:
集成电路设计
结题年份:
2023
批准年份:
2019
项目状态:
已结题
项目参与者:
凌明
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中文摘要
为了缓解日益严重的“功耗墙”问题,越来越多的应用要求将工作电压扩展到包括近阈值在内的宽电压范围。然而,局部工艺波动导致近阈值区SRAM存储单元延迟分布较逻辑电路呈现更为严重的长尾特性(非高斯分布),使得SRAM性能急剧恶化。这也使主要由SRAM构成的Cache成为系统的性能瓶颈。围绕近阈值Cache性能优化,本课题突破传统方案中要求访存结果必须完全正确的限制,采用时序推测的思想,开展SRAM电路结构、SRAM访问故障模型与Cache性能/能耗模型、Cache架构优化三个层次的研究。所提出的交叉感知机制可以将近阈值下的SRAM吞吐量提升近一倍;统计学故障模型可以较传统蒙特卡洛仿真更快地评估任意大小存储阵列的故障率和访问延迟;Tag与Data阵列双重推测的Cache架构、PVT自适应频率调节技术及“弱”存储单元重映射机制等优化技术可以将Cache访问延迟降低近50%,访问能耗降低40%左右。
英文摘要
To mitigate the ever-worsening “Power Wall” problem, more and more applications need to expand their power supply to the wide-voltage range, which includes the near-threshold area. However, the delay distribution of SRAM bit cells under the near-threshold voltage shows a more serious long-tail (non-Gaussian) characteristic than that of logic circuits due to the local process fluctuation. This non-Gaussian delay distribution makes the SRAM performance degraded significantly, which, in turn, makes the SRAM based Cache a performance bottleneck of the system. To address the problem of Cache performance degradation under the near-threshold condition, we break through the limitation of all memory accesses must be fully correct. Instead, based on the idea of timing speculation, we conduct studies in the SRAM circuits, SARM accessing fault modeling and Cache performance/power models and Cache architecture optimizations as well. Compared to the conventional approach, the throughput of SRAM arrays under the near-threshold power supply can be boosted almost 1X by leveraging the proposed cross-sensing mechanism. The proposed statistical accessing fault model can be applied to evaluate the fault ratios and latencies of SRAM arrays with arbitrary sizes,which is much faster than the time-consuming Monte Caro simulations. The Cache architecture optimizations carried out in our studies, such as the Tag and data array double-speculation Cache architecture, the PVT aware Cache frequency adjusting technology and the “weak” sub-block remapping mechanism, can significantly lower the average Cache access latency about 50%, while the average energy consumption of each Cache access can also be reduced roughly 40%.
期刊论文列表
专著列表
科研奖励列表
会议论文列表
专利列表
DOI:10.1016/j.sysarc.2020.101745
发表时间:2020
期刊:Journal of Systems Architecture
影响因子:--
作者:Ming Ling;Jiancong Ge;Guangmin Wang
通讯作者:Guangmin Wang
DOI:10.1109/tcad.2022.3194812
发表时间:2022-02
期刊:IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
影响因子:2.9
作者:Shan Shen;Peng Cao;Ming Ling;Longxing Shi
通讯作者:Shan Shen;Peng Cao;Ming Ling;Longxing Shi
DOI:10.1109/tvlsi.2019.2935227
发表时间:2019-04
期刊:IEEE Transactions on Very Large Scale Integration (VLSI) Systems
影响因子:2.8
作者:Shan Shen;Tianxiang Shao;Xiaojing Shang;Yichen Guo;Ming Ling;Jun Yang;Longxing Shi
通讯作者:Shan Shen;Tianxiang Shao;Xiaojing Shang;Yichen Guo;Ming Ling;Jun Yang;Longxing Shi
DOI:10.1109/TVLSI.2022.3217275
发表时间:2022
期刊:IEEE Transactions on Very Large Scale Integration (VLSI) Systems
影响因子:--
作者:Ming Ling;Qinde Lin;Ruiqi Chen;Haimeng Qi;Mengru Lin;Yanxiang Zhu;Jiansheng Wu
通讯作者:Jiansheng Wu
A Fast Cross-Layer Dynamic Power Estimation Method by Tracking Cycle-Accurate Activity Factors With Spark Streaming
一种通过 Spark Streaming 跟踪周期精确活动因子的快速跨层动态功率估计方法
DOI:10.1109/tvlsi.2021.3111000
发表时间:2021-09
期刊:IEEE Transactions on Very Large Scale Integration (VLSI) Systems
影响因子:2.8
作者:Leilei Jin;Wenjie Fu;Ming Ling;Longxing Shi
通讯作者:Longxing Shi
国内基金
海外基金