InAsSb材料体系具有吸收波长易调谐、带隙对组分不敏感、少子寿命长等特点，非常适合制作中波与长波红外探测器。本项目拟开展GaAs衬底上InAsSb材料的MOCVD外延生长与InAsSb/AlAsSb或InAsSb/InAlSb势垒型探测器制作的研究。利用MOCVD生长温度高、位错易滑移、成本低等优点在GaAs衬底上制备大尺寸、高品质、任意组分的InAsSb外延层，通过电子势垒结构抑制红外探测器中的产生-复合电流，减小由晶格失配产生的位错和缺陷的影响，并对异质结能带和载流子输运进行科学调控。探索在大失配体系下低位错密度、低杂质浓度的InAsSb吸收层和AlAsSb、InAlSb势垒层的生长方法，研究探测器结构、掺杂、工艺对器件光电性能的提升手段。通过本项目的实施，将推进GaAs基锑化物材料和器件的MOCVD技术发展，开拓红外探测器兼顾性能提升与成本控制的新途径。

InAsSb material system has been of great interest in infrared detector applications due to its characteristics such as wide wavelength tunability, low bandgap-to-composition sensitivity and long minority carrier lifetime. We propose to grow and fabricate InAsSb/AlAsSb and InAsSb/InAlSb barrier detectors on GaAs substrate by MOCVD. We take the advantage of MOCVD such as high growth temperature, easy dislocation movement and low cost to grow high-quality large-size InAsSb alloy with arbitrary compositions on GaAs. To suppress the adverse affects of dislocations and other defects resulting from large lattice mismatch, an electron barrier is employed in the device structure to reduce the G-R current and the band alignment is carefully engineered to promote the transport of minority carriers and impede the transport of major carriers. We will establish the growth windows of InAsSb and AlAsSb/InAlSb materials on GaAs substrate for high structural quality and low background impurity, and explore the approaches to improve device performances relevant to structure design and device processing. Through the implementation of this project, we expect to develop high-performance InAsSb barrier infrared detectors at low cost based on MOCVD technology and bandgap engineering.