面向存算一体应用的可重构铪基FeFET的易失-非易失双模动态调控

面向后摩尔时代急需发展的超低能耗信息处理新器件新机理、提升存算一体芯片算力等重大战略需求，基于氧化铪基FeFET功耗低、开关比高、工艺兼容性好等突出优势，针对Hf0.5Zr0.5O2（HZO）的铁电性起源及稳定性机理不清、负电容机制及调控方法欠缺等关键科学问题，采用HZO基可重构FeFET（RFeFET）新结构器件，通过调控制备工艺参数、优化器件尺寸，获得稳定的铁电相和负电容效应，发展负电容的实验测试方法；厘清HZO薄膜的铁电性起源及铁电相稳定性机理，探索HZO薄膜负电容的物理机制和影响因素，为负电容RFeFET提供清晰的物理图像和器件设计规则；探索RFeFET的易失-非易失双模动态调控方法及规律，并构建人工神经元和神经突触；建立自洽的基于物理的RFeFET的器件模型及与电路仿真兼容的SPICE模型。研究成果可以为后摩尔时代新器件基础研究提供有益的科学依据和技术支撑。

Developing new mechanisms of ultra-low energy consumption information processing devices and improving computing power of computing-in-memory chips are in great and crucial demand in the post Moore era. In this work, we propose a novel structure device of reconfigurable FeFET (RFeFET) based on ferroelectricity of Hf0.5Zr0.5O2 (HZO), by taking advantage of hafnium oxide based FeFET, such as the low power consumption, high switching ratio, and good process compatibility, to investigate some fundamental scientific issues such as the poorly known origin and stability mechanism of HZO and the lacking of negative capacitance mechanism and control methods. The device can be employed to obtain a stable ferroelectric phase and the negative capacitance effect through adjusting and controlling the fabrication process parameters and optimizing the device size, and to further develop an experimental test method for the negative capacitance. This work can also significantly improve our understanding of the ferroelectric origin, ferroelectric phase stability mechanism of HZO, and physical mechanism and influencing factors of the negative capacitance, leading to the provision of the clear physical image and device design rules for the negative capacitance FeFET. Other scientific studies are also tremendously benefited from this work, including the methods and rules of RFeFET's volatile-nonvolatile dual-mode dynamic modulation, the construction of artificial neuron and synapse by the use of RFeFET, and the creation of self-consistent RFeFET device model based on physics and SPICE model compatible with circuit simulation. The results in this work provide significant scientific and technical insights into the fundamental research and realization of the new devices in the post Moore era.