多端直流电网由于能够灵活实现多电源接入和多落点受电成为近年学术研究的热点。直流断路器是实现多端直流电网的核心装备，而具有高电压大电流（>5kV/10kA）关断能力的电力电子器件是研制高可靠、低成本直流断路器的关键。本项目以实现高电压下万安级大电流单次关断用IGCT器件为目标，基于可关断晶闸管类器件开展基础理论与关键技术研究。在基础理论方面，重点研究IGCT器件大电流关断瞬态的精细物理过程及其失效机理、多场耦合建模与快速求解方法、性能老化机理及其可靠性建模等；在关键技术方面，重点研究新型IGCT的结构参数、关键工艺、缺陷检测、低电感封装及超大功率驱动等。预期通过本项目的研究，建立高电压大电流单次关断用IGCT器件的理论分析模型，提出芯片横纵向结构优化参数，并研制出单次可关断电流大于15kA的IGCT器件，为我国大功率电力电子器件的基础理论研究与产业国际竞争力提升做出贡献。

With the advantage of flexible access to multi-power supplies and multi-infeed systems, multi-terminal DC transmission and distribution network has become the research hotspot in recent years. As one of the core equipment of multi-terminal DC transmission and distribution network, the DC circuit breaker can quickly cut off the fault current after the occurrence of a fault such as short-circuiting and grounding to ensure the safe and stable operation of power grid. In recent years, with the rapid development of high-voltage and high-capacity power electronic devices, ABB, Alstom, Siemens, State Grid Research Institute, Tsinghua University, etc. have developed hybrid DC circuit breakers based on power electronic devices and rapid arc transfer technique. Our team started researching hybrid DC circuit breakers in 2012 and quickly found that the key factors of hybrid DC circuit breakers are their reliability and cost, decided by power electronic devices with high-voltage and high-current turn-off capability (> 5kV/10kA).This project aims at developing IGCT devices with the capability of turning off ultra-high current (10,000 Amps) at high voltage for one time, and conducting research on basic theories and key technologies of turn-off thyristor-like devices. For the part of basic theories, we mainly study the physical process and failure mechanism of high current turn-off transient, the multi-field modeling and its rapid solution methods, the performance aging mechanism and the reliability modeling. For the key technologies part, we turn to studying the structural parameters, key manufacturing processes, defects detection, low inductance packaging and ultra-high power gate driver unit of IGCTs.It is expected that through the research of this project, we can establish the theoretical analysis model of IGCT devices for high-voltage and high-current single turn-off process. Then the optimized doping profiles and lateral structures of the chips are going to be proposed. Finally, a special kind of IGCT device with single turn-off current greater than 15 kA, repetitive peak off-state voltage higher than 5000V, on-state voltage lower than 2.5V will be manufactured. In general, we hope our work could enrich the basic theory research of IGCTs and contribute to improving international competitiveness of Chinese high-power electronic devices.