硅漂移探测器(SDD)阵列具有高位置分辨率、高能量分辨的特点，是最佳X光成像及元素分析探测器结构，在航天、X射线成像、X射线能谱成像、X射线荧光分析、生物医药、新材料、新能源等领域有广泛的应用。目前SDD阵列存在面积较小、灵敏度不高，基于内置JFET结构的ASIC芯片功耗较大、且JFET不能被X射线照射，读出芯片通道数少，像素点绑定线过多等亟待解决的问题。本项目以用于X射线成像的多通道硅漂移探测器阵列为研究对象，通过SDD芯片的优化设计与制备达到最佳的漂移通道和最短的漂移时间，实现最佳X射线成像；研究多通道ASIC读出电路及其与SDD阵列芯片的封装方法，有效抑制探测器漏电流和电子学噪声、提高SDD的能量分辨率。研究成果能实现我国低噪声、低功耗、多通道读出、高位置分辨率、高能量分辨率SDD从器件研究到系统集成技术应用的重大突破。

The silicon drift detector (SDD) array, due its high position and energy resolutions, is the best detector structure for X-ray imaging and element analysis. SDD array detectors can thus be widely applied in aerospace, X-ray imaging, X-ray energy spectrum imaging, X-ray fluorescence analysis, biological medicine, new materials, new energy and many other fields. At present, there are many problems to be solved before a SDD array can be widely applied. One problem is that the total area of the existing SDD array is too small, leading to low detection sensitivity. In addition, the power consumption of the ASIC chip based on the built-in JFET structure is large, and JFET is not radiation hard to X ray. What’s more, the channel number of the readout chip is too small, and the number of pixel bonding lines is too big, etc. This project is focused on silicon drift detector array with multichannel ASIC for X-Ray imaging and spectroscopy applications. Through optimization's of the design and manufacture of the SDD array, we can obtain the best drift channel and shortest drift time, achieving the best X ray imaging and spectroscopy. By researching on the multi-channel readout ASIC and the package method with SDD array, the detector leakage current and electronic noise can be effectively inhibited and the position and energy resolutions of the SDD array can be improved. The research results can achieve a major breakthrough from device research to system integration technology of low noise, low power consumption, multichannel readout, high position resolution and high energy resolution SDD in China.