钙钛矿结构锡酸盐ASnO3(A=Sr,Ba)作为一种新型宽带隙氧化物半导体材料，具有载流子迁移率高和光学透过率好等优点，近几年受到大家广泛关注。本项目将以宽带隙ASnO3为研究对象，采用脉冲激光沉积薄膜制备技术，选择Pb(Mg,Nb)O3-PbTiO3(PMNPT)压电衬底，利用衬底逆压电效应，开展ASnO3薄膜的能带原位应变调控研究，研究薄膜受到张应力、压应力以及双轴、单轴应变时带隙的变化，通过研究晶格应变原位调控能带的规律和物理机制，建立可靠的晶格应变与能带结构之间的关联；并在此基础上，选择La掺杂ASnO3为有源层、铁电Pb(Zr,Ti)O3为栅绝缘层制备铁电场效应晶体管(FeFET)，研究界面效应对晶体管性能的影响，通过制备工艺的优化，以期制备具有高质量界面、高场效应迁移率等性能优异的FeEFT。研究结果为这类新型锡酸盐薄膜材料在光电器件领域的应用提供必要的实验基础。

Wide band gap stannates ASnO3(A=Sr,Ba) with the perovskite structure have been received much attentions recently as a type of novel semiconductor due to their high carrier mobility and high transparency. In this project, we will mainly probe the band gap in situ modulation of ASnO3 films grown epitaxially on the piezoelctric Pb(Mg,Nb)O3-PbTiO3 (PMNPT) substrate by means of lattice strains utilizing converse-piezoelectric effect of PMNPT by pulsed laser deposition technique. And we will study the changes of band gap of the ASnO3 films induced by the in-plane tensile strain, compressive strain, biaxial and anisotropic uniaxial strain from the piezoelectric PMNPT single crystal substrates when applied the different electric field and orientation; The relationships of the energy-band structures of ASnO3 films with the lattice strains can be established by investigating the physical mechanisms and influence rules. Based on these studies, we will fabricate the ferroelectric field effect transistor (FeFET) using Pb(Zr,Ti)O3 as the ferroelectric gate insulator and La doped ASnO3 as the channel. We will also probe the effects of interface on the performance of FeFET, and expect to construct a markedly improved FeFET with a high-quality interface and large field effect mobility through optimizing the fabrication technique. The results of these investigations will provide the important experimental foundation for the potential applications of ASnO3 films in the optoelectronic devices.