铜锌锡硫量子点敏化纳晶薄膜太阳能电池的组成材料具有无毒、储量丰富、稳定性好等优点，并且电池制备工艺简单，具有潜在应用前景。针对铜锌锡硫量子点敏化纳晶薄膜存在的界面缺陷导致其光电转换效率低下的问题，本项目采用真空紫外光活化含氧金属化合物薄膜制备结构致密、均匀、结晶性可调的金属氧化物薄层，并应用于铜锌锡硫量子点敏化太阳能电池中作为导电基底致密层和敏化纳晶薄膜层间的界面修饰层。致密层可有效抑制光生电子到达导电基底后的反向复合过程，同时，针对各层相关界面进行必要的化学修饰，可改善界面性能，促进电子和空穴的转移和输运，抑制其复合过程，从而有效提高量子点敏化太阳能电池的光电转换性能。在此基础上，基于真空紫外光技术不需要高温的特点探讨其应用于柔性太阳能电池的制备，并探索其用于钙钛矿和无机薄膜等新型太阳能电池方面的普适性。

CZTS quantum dot-sensitized nanocrystalline thin film solar cell is one of the solar cells with potential application in future, because it is based on abundant, non-toxic and stable elements. To increase the low light-to-electric conversion efficiency duo to interface defects located at CZTS quantum dot-sensitized nanocrystalline thin film, we will employ vacuum ultraviolet via photochemical activation of the thin films containing metal and oxygen to prepare metal oxide compact and uniform thin films with controlled crystallinity. And the prepared thin layers will be used as the compact layer on conducting substrate and interfacial modification layers of the sensitized nanocrystalline thin films. The compact layer can effectively suppress the back recombination processes of photogenerated electrons on the conducting substrate. At the same time, the necessary chemical interfacial modification towards different interfaces can improve interfacial properties, favor transfer and transport of electrons and holes to suppress recombination and thus increase the photoelectric performance. Further, the high temperature free vacuum ultraviolet technique will be applied to fabricate flexible solar cells. The possibility to be used on perovskite and inorganic thin film solar cells will be explored.