本项目针对目前micro-LED显示的全彩化难题，通过制备GaN基micro-LED/量子点杂化器件，提出使用量子点材料作为光转换材料，调控短波长的micro-LED的发光，进行颜色转换，研发具有红绿蓝三基色的全彩色micro-LED显示器件的关键科学问题。本项目计划以钙钛矿量子点为典型光转换材料，制备micro-LED/量子点杂化器件，研究量子点自吸收效应对光转换效率和光致发光寿命的影响并建立理论模型；研发纳米结构薄膜，调控量子点的光转换效率、以及杂化器件的发光效率、出光角度等特性；分析光致发光寿命、光电信号上升沿/下降沿时间和光电调制带宽之间的理论联系，阐明杂化器件高频调制的机理；分析电流应力和温度应力对杂化器件的可靠性的影响。项目对杂化器件的基础研究工作有助于开发全彩色快响应micro-LED显示器件的显示信息、传输信息等多重功能，促进全彩色micro-LED显示的产业化进展。

This project proposes the fabrication of hybrid GaN-based micro-LED/quantum dot (QD) devices for the challenge of full-color micro-LED display. QD materials will be employed as the color conversion materials to modify the short wavelength of micro-LEDs and convert the micro-LED emission color. The key scientific problems of the hybrid red, green and blue micro-LEDs will be investigated. In this project we plan to use perovskite QDs as typical color conversion materials to fabricate hybrid micro-LED/QD devices. The self-absorption effect of QD on conversion efficiency and time -resolved photoluminescence (TRPL) lifetime will be analyzed and related model will be built. Furthermore, the nano-structure QD film will be developed to modify the color conversion efficiency, the efficiency of hybrid devices, the radiation angle, etc. In addition, the high-frequency modulation mechanisms of the hybrid devices will be clarified by analyzing the TRPL lifetime, optical signal rise and fall time, and the electrical-to-optical modulation bandwidth. Finally, the effects of current stress and temperature stress on the hybrid devices will be investigated. The proposed research contents of this project will help the development of full-color fast-response micro-LED display devices for applications in display and optical communication, which will facilitate the industrialization of full-color micro-LED display.